Adsorption and thermal or photodecomposition of triethylgallium and trimethylgallium on si(Lll)-7 x7

Ken Ichi Fukui, Wataru Mizutani, Hiroshi Onishi, Shingo Ichimura, Hazime Shimizu, Yasuhiro Iwasawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Adsorption and thermal or photodecomposition of triethylgallium (TEG) and trimethylgallium (TMG) on Si(lll)-7x7 were investigated using a home-built scanning tunneling microscope (STM), Auger electron spectroscopy (AES), and thermal desorption spectroscopy (TDS). Adsorption of TEG and TMG at room temperature gave bright protrusions of GatoHs^ia) and Ga(CH3)a;(a) (x = 2, 3) on atop sites of Si adatoms with a slight preference for center adatoms over comer ones. The Ga(C2Hs)x(a) and Ga(CH3)x(a) species were decomposed by UV irradiation probably due to absorption of UV photons by these adsorbates. Thermal decomposition of TEG on the 7x7 surface led to severe carbon deposition, particularly at low initial coverage of TEG, in contrast to the result reported on Si(l00)-2 x 1.

Original languageEnglish
Pages (from-to)4910-4916
Number of pages7
JournalJapanese journal of applied physics
Volume34
Issue number9R
DOIs
Publication statusPublished - 1995 Sep
Externally publishedYes

Keywords

  • AES
  • Adsorption
  • Photodecomposition
  • STM
  • Si(111)
  • TDS
  • Thermal decomposition
  • Triethylgallium
  • Trimethylgallium

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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