Adsorption of a carboxylic acid-functionalized aminoxyl radical onto SiO2

Hidenori Murata, Martha Baskett, Hiroyuki Nishide, Paul M. Lahti

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Silicon wafers both without and with silicon(IV) oxide surface coverage were covered with benzene solutions of stable organic radical 3-(N-tert-butyl-N-aminoxyl)benzoic acid (mNBA). X-ray photoelectron spectroscopy supported the presence of the radical on both surface-cleaned (oxide-reduced) and oxide-covered surfaces. Optical waveguide spectroscopy showed that the radical retained its structure while adsorbed to the surface of the wafers, without noticeable decomposition. AFM and MFM imaging showed that the radical formed blocky particles with a change in rms roughness from 0.3 nm premodification to 1.7 nm postmodification on the surface-cleaned silicon. Similar experiments using oxide-coated silicon showed that the radical adsorbed to form much smoother layers, with a small change in rms roughness from 0.2 to 0.3 nm. Contact angle measurements of water on the premodified and postmodified samples showed a large, hydrophobic change in the silicon oxide surface but only a modest change in the surface-cleaned silicon surface. Samples of mNBA adsorbed onto silica gel showed strong electron-spin resonance signals from the aminoxyl spin, even years after production. The results demonstrate the prospects for treating and coating oxide-covered silicon wafers and silicon oxide-coated particles with a paramagnetically active organic substrate, without major chemical modification of the pretreatment surface; the resulting organic spin sites can be stable for years.

    Original languageEnglish
    Pages (from-to)4026-4032
    Number of pages7
    JournalLangmuir
    Volume30
    Issue number14
    DOIs
    Publication statusPublished - 2014 Apr 15

    Fingerprint

    Carboxylic Acids
    Carboxylic acids
    carboxylic acids
    Adsorption
    adsorption
    silicon oxides
    Silicon oxides
    Silicon
    Oxides
    Benzoic Acid
    oxides
    Benzoic acid
    benzoic acid
    wafers
    silicon
    Silicon wafers
    roughness
    Surface roughness
    magnetic force microscopy
    Silica Gel

    ASJC Scopus subject areas

    • Electrochemistry
    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Materials Science(all)
    • Spectroscopy

    Cite this

    Adsorption of a carboxylic acid-functionalized aminoxyl radical onto SiO2 . / Murata, Hidenori; Baskett, Martha; Nishide, Hiroyuki; Lahti, Paul M.

    In: Langmuir, Vol. 30, No. 14, 15.04.2014, p. 4026-4032.

    Research output: Contribution to journalArticle

    Murata, Hidenori ; Baskett, Martha ; Nishide, Hiroyuki ; Lahti, Paul M. / Adsorption of a carboxylic acid-functionalized aminoxyl radical onto SiO2 In: Langmuir. 2014 ; Vol. 30, No. 14. pp. 4026-4032.
    @article{2b7a9d16032749bb881baf04d43ce7b8,
    title = "Adsorption of a carboxylic acid-functionalized aminoxyl radical onto SiO2",
    abstract = "Silicon wafers both without and with silicon(IV) oxide surface coverage were covered with benzene solutions of stable organic radical 3-(N-tert-butyl-N-aminoxyl)benzoic acid (mNBA). X-ray photoelectron spectroscopy supported the presence of the radical on both surface-cleaned (oxide-reduced) and oxide-covered surfaces. Optical waveguide spectroscopy showed that the radical retained its structure while adsorbed to the surface of the wafers, without noticeable decomposition. AFM and MFM imaging showed that the radical formed blocky particles with a change in rms roughness from 0.3 nm premodification to 1.7 nm postmodification on the surface-cleaned silicon. Similar experiments using oxide-coated silicon showed that the radical adsorbed to form much smoother layers, with a small change in rms roughness from 0.2 to 0.3 nm. Contact angle measurements of water on the premodified and postmodified samples showed a large, hydrophobic change in the silicon oxide surface but only a modest change in the surface-cleaned silicon surface. Samples of mNBA adsorbed onto silica gel showed strong electron-spin resonance signals from the aminoxyl spin, even years after production. The results demonstrate the prospects for treating and coating oxide-covered silicon wafers and silicon oxide-coated particles with a paramagnetically active organic substrate, without major chemical modification of the pretreatment surface; the resulting organic spin sites can be stable for years.",
    author = "Hidenori Murata and Martha Baskett and Hiroyuki Nishide and Lahti, {Paul M.}",
    year = "2014",
    month = "4",
    day = "15",
    doi = "10.1021/la5000952",
    language = "English",
    volume = "30",
    pages = "4026--4032",
    journal = "Langmuir",
    issn = "0743-7463",
    publisher = "American Chemical Society",
    number = "14",

    }

    TY - JOUR

    T1 - Adsorption of a carboxylic acid-functionalized aminoxyl radical onto SiO2

    AU - Murata, Hidenori

    AU - Baskett, Martha

    AU - Nishide, Hiroyuki

    AU - Lahti, Paul M.

    PY - 2014/4/15

    Y1 - 2014/4/15

    N2 - Silicon wafers both without and with silicon(IV) oxide surface coverage were covered with benzene solutions of stable organic radical 3-(N-tert-butyl-N-aminoxyl)benzoic acid (mNBA). X-ray photoelectron spectroscopy supported the presence of the radical on both surface-cleaned (oxide-reduced) and oxide-covered surfaces. Optical waveguide spectroscopy showed that the radical retained its structure while adsorbed to the surface of the wafers, without noticeable decomposition. AFM and MFM imaging showed that the radical formed blocky particles with a change in rms roughness from 0.3 nm premodification to 1.7 nm postmodification on the surface-cleaned silicon. Similar experiments using oxide-coated silicon showed that the radical adsorbed to form much smoother layers, with a small change in rms roughness from 0.2 to 0.3 nm. Contact angle measurements of water on the premodified and postmodified samples showed a large, hydrophobic change in the silicon oxide surface but only a modest change in the surface-cleaned silicon surface. Samples of mNBA adsorbed onto silica gel showed strong electron-spin resonance signals from the aminoxyl spin, even years after production. The results demonstrate the prospects for treating and coating oxide-covered silicon wafers and silicon oxide-coated particles with a paramagnetically active organic substrate, without major chemical modification of the pretreatment surface; the resulting organic spin sites can be stable for years.

    AB - Silicon wafers both without and with silicon(IV) oxide surface coverage were covered with benzene solutions of stable organic radical 3-(N-tert-butyl-N-aminoxyl)benzoic acid (mNBA). X-ray photoelectron spectroscopy supported the presence of the radical on both surface-cleaned (oxide-reduced) and oxide-covered surfaces. Optical waveguide spectroscopy showed that the radical retained its structure while adsorbed to the surface of the wafers, without noticeable decomposition. AFM and MFM imaging showed that the radical formed blocky particles with a change in rms roughness from 0.3 nm premodification to 1.7 nm postmodification on the surface-cleaned silicon. Similar experiments using oxide-coated silicon showed that the radical adsorbed to form much smoother layers, with a small change in rms roughness from 0.2 to 0.3 nm. Contact angle measurements of water on the premodified and postmodified samples showed a large, hydrophobic change in the silicon oxide surface but only a modest change in the surface-cleaned silicon surface. Samples of mNBA adsorbed onto silica gel showed strong electron-spin resonance signals from the aminoxyl spin, even years after production. The results demonstrate the prospects for treating and coating oxide-covered silicon wafers and silicon oxide-coated particles with a paramagnetically active organic substrate, without major chemical modification of the pretreatment surface; the resulting organic spin sites can be stable for years.

    UR - http://www.scopus.com/inward/record.url?scp=84898875336&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84898875336&partnerID=8YFLogxK

    U2 - 10.1021/la5000952

    DO - 10.1021/la5000952

    M3 - Article

    VL - 30

    SP - 4026

    EP - 4032

    JO - Langmuir

    JF - Langmuir

    SN - 0743-7463

    IS - 14

    ER -