Advanced GaN HEMT modeling techniques and power amplifiers for millimeter-wave applications

Shintaro Shinjo*, Masatake Hangai, Yutaro Yamaguchi, Moriyasu Miyazaki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Satellite communications become more interesting because of an increasing number of satellite launches for especially Ku-band very small aperture terminals (VSAT). Recently, the systems push the frequency specifications towards millimeter-wave such as Ka-band. Also, the fifth generation mobile communications (5G) are expected to accommodate the forthcoming huge traffic demands with using millimeter-wave as well as sub-6GHz. Here, PAs have been always the working horse for RF frontend in any radio transmitters. In particular, advanced GaN PAs occupy the attentions with evolving to deal with ever-increasing system level requirements. This paper presents the prototyped results of state-of -the art GaN PAs for millimeter-wave applications and novel modelling techniques for their designs.

Original languageEnglish
Title of host publicationIMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages566-569
Number of pages4
ISBN (Electronic)9781728168159
DOIs
Publication statusPublished - 2020 Aug
Externally publishedYes
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
Duration: 2020 Aug 42020 Aug 6

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2020-August
ISSN (Print)0149-645X

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Country/TerritoryUnited States
CityVirtual, Los Angeles
Period20/8/420/8/6

Keywords

  • 5G
  • GaN
  • Millimeter-wave
  • MMIC
  • Power amplifier
  • Satellite communication

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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