Advanced ion implantation and rapid thermal annealing technologies for highly reliable 0.25μm dual gate CMOS

S. Shimizu, T. Kuroi, Y. Kawasaki, T. Tsutsumi, H. Oda, M. Inuishi, H. Miyoshi

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Advanced ion implantation and rapid thermal annealing technologies are proposed to realize highly reliable 0.25μm salicided dual gate CMOS for high performance logic application. These technologies mainly consist of mixing the CoSi2/Si interface using silicon implantation, CVD-Si3N4/CVD-SiO2 sidewall spacer, nitrogen implantation in gate polysilicon and source/drain regions and rapid thermal annealing (RTA) for reduction of thermal budget.

Original languageEnglish
Pages (from-to)64-65
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 1996 Jan 1
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 1996 Jun 111996 Jun 13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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