Advanced ion implantation and rapid thermal annealing technologies are proposed to realize highly reliable 0.25μm salicided dual gate CMOS for high performance logic application. These technologies mainly consist of mixing the CoSi2/Si interface using silicon implantation, CVD-Si3N4/CVD-SiO2 sidewall spacer, nitrogen implantation in gate polysilicon and source/drain regions and rapid thermal annealing (RTA) for reduction of thermal budget.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 1996 Jan 1|
|Event||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 1996 Jun 11 → 1996 Jun 13
ASJC Scopus subject areas
- Electrical and Electronic Engineering