Advanced retrograde well technology for 90-nm-node embedded static random access memory using high-energy parallel beam

Tomohiro Yamashita, Masashi Kltazawa, Yoji Kawasaki, Hiroyuki Takashino, Takashi Kuroi, Yasuo Inoue, Masahide Inuishi

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Abstract

The advantage of forming a retrograde well using a high-energy parallel beam has been experimentally clarified for the first time. A conventional batch-type implanter requires tilted implantation to suppress the spatial variation in a wafer. Tilted implantation, however, imposes a limit on inter-well isolation, since it deteriorates the punchthrough resistance between the source-drain diffusion and the well, and causes variation in the threshold voltage for metal-oxide-semiconductor field-effect transistors (MOSFETs) around the well boundary. A parallel beam produced by a single-wafer implanter is found to give quite a uniform doping profile even for 0°-normal implantation. Small tilt angle implantation using a high-energy parallel beam improves inter-well isolation by ∼ 0.16 μm compared with the conventional 7°-tilted implantation, which yields a ∼ 15% reduction in the static random access memory (SRAM) cell size. This advanced retrograde well technology is indispensable for inter-well isolation of a 90-nm-node embedded SRAM with a sub-1-μm2 cell.

Original languageEnglish
Pages (from-to)2399-2403
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - 2002 Apr 1

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Keywords

  • High-energy ion implantation
  • Parallel beam
  • Retrograde well
  • Silicon
  • System on a chip

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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