Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

K. Horita, T. Kuroi, Y. Itoh, K. Shiozawa, K. Eikyu, K. Goto, Y. Inoue, Masahide Inuishi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.

Original languageEnglish
Pages (from-to)178-179
Number of pages2
JournalUnknown Journal
Publication statusPublished - 2000
Externally publishedYes

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Electric fields
Oxidation
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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond. / Horita, K.; Kuroi, T.; Itoh, Y.; Shiozawa, K.; Eikyu, K.; Goto, K.; Inoue, Y.; Inuishi, Masahide.

In: Unknown Journal, 2000, p. 178-179.

Research output: Contribution to journalArticle

Horita, K. ; Kuroi, T. ; Itoh, Y. ; Shiozawa, K. ; Eikyu, K. ; Goto, K. ; Inoue, Y. ; Inuishi, Masahide. / Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond. In: Unknown Journal. 2000 ; pp. 178-179.
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AU - Inoue, Y.

AU - Inuishi, Masahide

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