A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.
|Number of pages||2|
|Publication status||Published - 2000|
ASJC Scopus subject areas
- Electrical and Electronic Engineering