Advanced shallow trench isolation to suppress the inverse narrow channel effects for 0.24 μm pitch isolation and beyond

K. Horita, T. Kuroi, Y. Itoh, K. Shiozawa, K. Eikyu, K. Goto, Y. Inoue, M. Inuishi

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

A novel shallow trench isolation (STI) technique named Poly-Si-Buffered-mask STI (PB-STI) using the SiN/poly-Si/SiO2 stacked mask has been proposed. Poly-Si is oxidized at the step of liner oxidation and then `small bird's beak' is grown. With small bird's beak formation the oxide recess at the trench edge is prevented and the fringing of electric-field from the gate electrode can be effectively avoided. PB-STI can completely suppress the inverse narrow channel effect with quite simple process sequence which includes no corner implantation.

Original languageEnglish
Pages (from-to)178-179
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Publication statusPublished - 2000 Jan 1
Externally publishedYes
Event2000 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 2000 Jun 132000 Jun 15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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