TY - JOUR
T1 - Advantage of highly concentrated (≥90%) ozone for chemical vapor deposition SiO2 grown under 200 °c using hexamethyldisilazane and ultraviolet light excited ozone
AU - Kameda, Naoto
AU - Nishiguchi, Tetsuya
AU - Morikawa, Yoshiki
AU - Kekura, Mitsuru
AU - Nonaka, Hidehiko
AU - Ichimura, Shingo
PY - 2009/5/1
Y1 - 2009/5/1
N2 - We have compared the UV-light-excited ozone chemical vapor deposition (CVD) process conditions and the film quality for the cases where either highly concentrated (≥90%: HC) or 7% ozone and either hexamethyldisilazane (HMDS) or tetraethoxysilane (TEOS) are used. The SiO2 film deposited using HMDS and UV-excited HC ozone with an optimized flow rate has the highest quality in terms of leakage current density, etching rate, and deposition rate which are comparable or superior to those of the conventional thermal TEOS SiO 2 grown at 620 °C. These results lead to a conclusion that it is preferable to use HC ozone for UV-light-excited-ozone CVD to deposit the high quality SiO2 films at a practical rate at a temperature as low as 200°C.
AB - We have compared the UV-light-excited ozone chemical vapor deposition (CVD) process conditions and the film quality for the cases where either highly concentrated (≥90%: HC) or 7% ozone and either hexamethyldisilazane (HMDS) or tetraethoxysilane (TEOS) are used. The SiO2 film deposited using HMDS and UV-excited HC ozone with an optimized flow rate has the highest quality in terms of leakage current density, etching rate, and deposition rate which are comparable or superior to those of the conventional thermal TEOS SiO 2 grown at 620 °C. These results lead to a conclusion that it is preferable to use HC ozone for UV-light-excited-ozone CVD to deposit the high quality SiO2 films at a practical rate at a temperature as low as 200°C.
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U2 - 10.1143/JJAP.48.05DB01
DO - 10.1143/JJAP.48.05DB01
M3 - Article
AN - SCOPUS:70249098454
SN - 0021-4922
VL - 48
SP - 05DB011-05DB014
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5 PART 2
ER -