AFM studies on the difference in wear behavior between Si and SiO2 in KOH solution

Futoshi Katsuki, Kazuhito Kamei, Akihiko Saguchi, Wataru Takahashi, Junji Watanabe

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49 Citations (Scopus)

Abstract

Wear behavior between a Si tip and a SiO2 film in KOH solution at various pH values has been examined by using an atomic force microscope. We found that the Si tip removal amount strongly depended on the solution pH value and was at a maximum at pH 10.2-12.5. This result indicates that wear behavior of the Si tip is similar to that of actual chemical mechanical polishing of a Si wafer. It was also found that the Si removal volume in moles was approximately equal to that of SiO2 irrespective of the solution pH value. This equality implies that a Si-O-Si bridge is formed between one Si atom and one SiO2 molecule at the wear interface, followed by the oxidation of the Si tip, and finally the bond rupture by the tip movement and the silica species including the Si-O-Si bridge is dissolved in the KOH solution.

Original languageEnglish
Pages (from-to)2328-2331
Number of pages4
JournalJournal of the Electrochemical Society
Volume147
Issue number6
DOIs
Publication statusPublished - 2000 Jun
Externally publishedYes

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ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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