Air-stable n-channel organic field-effect transistors based on N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide

Yoshinobu Hosoi, Daisuke Tsunami, Hisao Ishii, Yukio Furukawa

    Research output: Contribution to journalArticle

    58 Citations (Scopus)

    Abstract

    Air-stable n-channel field-effect transistors based on thin films of the compound, N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB), were fabricated, and the effects of surface treatment and substrate temperature at the film deposition on the electron mobility of the transistors were studied. The maximum mobility, 4.1 × 10-2 cm2 V-1 s-1 in the saturation region (1.7 × 10-2 cm2 V-1 s-1 in the linear region), was obtained in air for the film deposited at 95 °C on the SiO2 surface modified with hexamethyldisilazane. The high electron affinity of PTCDI-TFB estimated at 4.8 eV by photoelectron yield spectroscopy and UV-Vis absorption spectroscopy, which is ascribable to the trifluoromethylbenzyl groups, is likely to result in the observed stable transistor operation in air.

    Original languageEnglish
    Pages (from-to)139-143
    Number of pages5
    JournalChemical Physics Letters
    Volume436
    Issue number1-3
    DOIs
    Publication statusPublished - 2007 Feb 27

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    Perylene
    Organic field effect transistors
    field effect transistors
    air
    Transistors
    transistors
    Air
    Electron affinity
    Electron mobility
    Field effect transistors
    Photoelectrons
    electron affinity
    surface treatment
    Ultraviolet spectroscopy
    Absorption spectroscopy
    electron mobility
    Surface treatment
    absorption spectroscopy
    photoelectrons
    Spectroscopy

    ASJC Scopus subject areas

    • Physical and Theoretical Chemistry
    • Spectroscopy
    • Atomic and Molecular Physics, and Optics
    • Surfaces and Interfaces
    • Condensed Matter Physics

    Cite this

    Air-stable n-channel organic field-effect transistors based on N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide. / Hosoi, Yoshinobu; Tsunami, Daisuke; Ishii, Hisao; Furukawa, Yukio.

    In: Chemical Physics Letters, Vol. 436, No. 1-3, 27.02.2007, p. 139-143.

    Research output: Contribution to journalArticle

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    abstract = "Air-stable n-channel field-effect transistors based on thin films of the compound, N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB), were fabricated, and the effects of surface treatment and substrate temperature at the film deposition on the electron mobility of the transistors were studied. The maximum mobility, 4.1 × 10-2 cm2 V-1 s-1 in the saturation region (1.7 × 10-2 cm2 V-1 s-1 in the linear region), was obtained in air for the film deposited at 95 °C on the SiO2 surface modified with hexamethyldisilazane. The high electron affinity of PTCDI-TFB estimated at 4.8 eV by photoelectron yield spectroscopy and UV-Vis absorption spectroscopy, which is ascribable to the trifluoromethylbenzyl groups, is likely to result in the observed stable transistor operation in air.",
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    AU - Ishii, Hisao

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