Air-stable n-channel field-effect transistors based on thin films of the compound, N,N′-bis(4-trifluoromethylbenzyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB), were fabricated, and the effects of surface treatment and substrate temperature at the film deposition on the electron mobility of the transistors were studied. The maximum mobility, 4.1 × 10-2 cm2 V-1 s-1 in the saturation region (1.7 × 10-2 cm2 V-1 s-1 in the linear region), was obtained in air for the film deposited at 95 °C on the SiO2 surface modified with hexamethyldisilazane. The high electron affinity of PTCDI-TFB estimated at 4.8 eV by photoelectron yield spectroscopy and UV-Vis absorption spectroscopy, which is ascribable to the trifluoromethylbenzyl groups, is likely to result in the observed stable transistor operation in air.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry