Al and N co-doped ZnTe Layers Grown by MBE

    Research output: Contribution to journalArticle

    5 Citations (Scopus)

    Abstract

    The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.

    Original languageEnglish
    Pages (from-to)285-288
    Number of pages4
    JournalJournal of Crystal Growth
    Volume301-302
    Issue numberSPEC. ISS.
    DOIs
    Publication statusPublished - 2007 Apr

    Fingerprint

    Molecular beam epitaxy
    molecular beam epitaxy
    Doping (additives)
    Gases
    gases
    Atoms
    atoms
    spacing
    nitrogen
    Nitrogen
    Plasmas
    Crystals
    crystals
    Temperature

    Keywords

    • A1. Impurities
    • A3. Molecular beam epitaxy
    • B1. Zinc compounds
    • B2. Semiconducting II-VI materials

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Al and N co-doped ZnTe Layers Grown by MBE. / Ichiba, A.; Kobayashi, Masakazu.

    In: Journal of Crystal Growth, Vol. 301-302, No. SPEC. ISS., 04.2007, p. 285-288.

    Research output: Contribution to journalArticle

    Ichiba, A. ; Kobayashi, Masakazu. / Al and N co-doped ZnTe Layers Grown by MBE. In: Journal of Crystal Growth. 2007 ; Vol. 301-302, No. SPEC. ISS. pp. 285-288.
    @article{97da250ad7af4a218f29b9468a366016,
    title = "Al and N co-doped ZnTe Layers Grown by MBE",
    abstract = "The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.",
    keywords = "A1. Impurities, A3. Molecular beam epitaxy, B1. Zinc compounds, B2. Semiconducting II-VI materials",
    author = "A. Ichiba and Masakazu Kobayashi",
    year = "2007",
    month = "4",
    doi = "10.1016/j.jcrysgro.2006.11.268",
    language = "English",
    volume = "301-302",
    pages = "285--288",
    journal = "Journal of Crystal Growth",
    issn = "0022-0248",
    publisher = "Elsevier",
    number = "SPEC. ISS.",

    }

    TY - JOUR

    T1 - Al and N co-doped ZnTe Layers Grown by MBE

    AU - Ichiba, A.

    AU - Kobayashi, Masakazu

    PY - 2007/4

    Y1 - 2007/4

    N2 - The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.

    AB - The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.

    KW - A1. Impurities

    KW - A3. Molecular beam epitaxy

    KW - B1. Zinc compounds

    KW - B2. Semiconducting II-VI materials

    UR - http://www.scopus.com/inward/record.url?scp=33947303663&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33947303663&partnerID=8YFLogxK

    U2 - 10.1016/j.jcrysgro.2006.11.268

    DO - 10.1016/j.jcrysgro.2006.11.268

    M3 - Article

    AN - SCOPUS:33947303663

    VL - 301-302

    SP - 285

    EP - 288

    JO - Journal of Crystal Growth

    JF - Journal of Crystal Growth

    SN - 0022-0248

    IS - SPEC. ISS.

    ER -