Al and N co-doped ZnTe Layers Grown by MBE

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    Abstract

    The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.

    Original languageEnglish
    Pages (from-to)285-288
    Number of pages4
    JournalJournal of Crystal Growth
    Volume301-302
    Issue numberSPEC. ISS.
    DOIs
    Publication statusPublished - 2007 Apr

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    Keywords

    • A1. Impurities
    • A3. Molecular beam epitaxy
    • B1. Zinc compounds
    • B2. Semiconducting II-VI materials

    ASJC Scopus subject areas

    • Condensed Matter Physics

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