TY - JOUR
T1 - Al and N co-doped ZnTe Layers Grown by MBE
AU - Ichiba, A.
AU - Kobayashi, M.
N1 - Funding Information:
This work was supported in part by Waseda University Open Research Center Projects, The Science Research Promotion Fund of The Promotion and Mutual Aid Corporation for Private Schools of Japan, Grant for Special Research Project, JSPS Grants-in-Aid for Scientific Research (B).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/4
Y1 - 2007/4
N2 - The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.
AB - The co-doping technique known as an effective method to circumvent the dopant compensation problem was applied for the molecular beam epitaxy (MBE) growth of homoepitaxial ZnTe layers. The co-doping concept is to introduce two oppositely polar atoms at the same time in a 2:1 ratio, forming metastable three-atom complexes located at adjacent crystal sites. Al donor and N acceptor were sandwiched between undoped ZnTe spacing layers. In order to reduce the beam intensity of the RF plasma excited nitrogen species, N2 gas was diluted by Ar gas. From the low temperature PL spectra, the increase of the Al doping efficiency was confirmed for co-doped layers, especially co-doped using the diluted N2 gas.
KW - A1. Impurities
KW - A3. Molecular beam epitaxy
KW - B1. Zinc compounds
KW - B2. Semiconducting II-VI materials
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U2 - 10.1016/j.jcrysgro.2006.11.268
DO - 10.1016/j.jcrysgro.2006.11.268
M3 - Article
AN - SCOPUS:33947303663
VL - 301-302
SP - 285
EP - 288
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS.
ER -