Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

Minehide Kusayanagi; Azusa Uchida; Nobuto Oka; Junjun Jia; Shin Ichi Nakamura; Yuzo Shigesato

doi:10.1016/j.tsf.2013.10.153

Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

Minehide Kusayanagi, Azusa Uchida, Nobuto Oka, Junjun Jia, Shin Ichi Nakamura, Yuzo Shigesato^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn-Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10^{- 4} Ω cm, whereas this was reduced to 5.9 × 10^{- 4} Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film.

Original language	English
Pages (from-to)	93-99
Number of pages	7
Journal	Thin Solid Films
Volume	555
DOIs	https://doi.org/10.1016/j.tsf.2013.10.153
Publication status	Published - 2014 Mar 31
Externally published	Yes

Keywords

Al-doped ZnO (AZO)
Buffer layer
Crystallinity
Reactive sputtering
Strained layer
Transparent conducting oxide (TCO)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2013.10.153

Cite this

@article{7af368829292433fb5959557904f3346,

title = "Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering",

abstract = "Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn-Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10- 4 Ω cm, whereas this was reduced to 5.9 × 10- 4 Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film.",

keywords = "Al-doped ZnO (AZO), Buffer layer, Crystallinity, Reactive sputtering, Strained layer, Transparent conducting oxide (TCO)",

author = "Minehide Kusayanagi and Azusa Uchida and Nobuto Oka and Junjun Jia and Nakamura, {Shin Ichi} and Yuzo Shigesato",

note = "Funding Information: This work was partially supported by the New Energy and Industrial Technology Development Organization (NEDO) as a project of {\textquoteleft}Fundamental Technology Development of Next Generation Lighting of High-efficiency and High-quality{\textquoteright}. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "2014",

month = mar,

day = "31",

doi = "10.1016/j.tsf.2013.10.153",

language = "English",

volume = "555",

pages = "93--99",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

AU - Kusayanagi, Minehide

AU - Uchida, Azusa

AU - Oka, Nobuto

AU - Jia, Junjun

AU - Nakamura, Shin Ichi

AU - Shigesato, Yuzo

N1 - Funding Information: This work was partially supported by the New Energy and Industrial Technology Development Organization (NEDO) as a project of ‘Fundamental Technology Development of Next Generation Lighting of High-efficiency and High-quality’. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 2014/3/31

Y1 - 2014/3/31

N2 - Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn-Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10- 4 Ω cm, whereas this was reduced to 5.9 × 10- 4 Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film.

AB - Al-doped ZnO (AZO) films were deposited on a fused silica glass substrate by reactive dc unbalanced magnetron sputtering using a Zn-Al (Al: 3.6 at.%) alloy target with an impedance control system. A very thin slightly reduced AZO buffer layer was inserted between the glass substrate and AZO films. For the AZO films deposited at 200 C, the lowest resistivity in the absence of the buffer layer was 8.0 × 10- 4 Ω cm, whereas this was reduced to 5.9 × 10- 4 Ω cm after introducing a 5-nm-thick buffer layer. The transmittance for all the films was above 80% in the visible region. The effects of the buffer layer were analysed and discussed in detail. It is found that the insertion of the buffer layer can improve the crystallinity of the AZO film.

KW - Al-doped ZnO (AZO)

KW - Buffer layer

KW - Crystallinity

KW - Reactive sputtering

KW - Strained layer

KW - Transparent conducting oxide (TCO)

UR - http://www.scopus.com/inward/record.url?scp=84894499461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894499461&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.10.153

DO - 10.1016/j.tsf.2013.10.153

M3 - Article

AN - SCOPUS:84894499461

SN - 0040-6090

VL - 555

SP - 93

EP - 99

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Al-doped ZnO films deposited on a slightly reduced buffer layer by reactive dc unbalanced magnetron sputtering

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this