AlGaAs/GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate modulation epitaxy

Toshiki Makimoto, Naoki Kobayashi, Hiroshi Ito, Tadao Ishibashi

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

AlGaAs/GaAs heterojunction bipolar transistors are fabricated using carbon-doped p-type GaAs base regions grown for the first time by flow-rate modulation epitaxy. Because of the much smaller diffusion coefficient of carbon atoms in GaAs than that of beryllium and other p-type impurities, sharp impurity profiles are achieved. The heterojunction bipolar transistors exhibited high current gains up to 40 for a base layer width of 150 nm and base doping of 2.4×1019 cm-3. The electron lifetime in heavily carbon-doped GaAs layers is considerably long, indicating favorable quality of heavily carbon-doped layers.

Original languageEnglish
Pages (from-to)39-41
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number1
DOIs
Publication statusPublished - 1989 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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