AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Toshio Nishida; Toshiki Makimoto; Hisao Saito; Tomoyuki Ban

doi:10.1063/1.1646454

AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Toshio Nishida^*, Toshiki Makimoto, Hisao Saito, Tomoyuki Ban

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

The GaN-free UV-LED structure was applied to a bulk AlN substrate which has high thermal conductivity. The potential of this structure to the high current injection operation was confirmed. The output power linearly increased up to 300 mA and this saturation current is about twice that of the LED grown on sapphire substrate. The emission spectrum was found to be stable.

Original language	English
Pages (from-to)	1002-1003
Number of pages	2
Journal	Applied Physics Letters
Volume	84
Issue number	6
DOIs	https://doi.org/10.1063/1.1646454
Publication status	Published - 2004 Feb 9
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1646454

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title = "AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates",

abstract = "The GaN-free UV-LED structure was applied to a bulk AlN substrate which has high thermal conductivity. The potential of this structure to the high current injection operation was confirmed. The output power linearly increased up to 300 mA and this saturation current is about twice that of the LED grown on sapphire substrate. The emission spectrum was found to be stable.",

author = "Toshio Nishida and Toshiki Makimoto and Hisao Saito and Tomoyuki Ban",

year = "2004",

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AU - Nishida, Toshio

AU - Makimoto, Toshiki

AU - Saito, Hisao

AU - Ban, Tomoyuki

PY - 2004/2/9

Y1 - 2004/2/9

N2 - The GaN-free UV-LED structure was applied to a bulk AlN substrate which has high thermal conductivity. The potential of this structure to the high current injection operation was confirmed. The output power linearly increased up to 300 mA and this saturation current is about twice that of the LED grown on sapphire substrate. The emission spectrum was found to be stable.

AB - The GaN-free UV-LED structure was applied to a bulk AlN substrate which has high thermal conductivity. The potential of this structure to the high current injection operation was confirmed. The output power linearly increased up to 300 mA and this saturation current is about twice that of the LED grown on sapphire substrate. The emission spectrum was found to be stable.

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DO - 10.1063/1.1646454

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JO - Applied Physics Letters

JF - Applied Physics Letters

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AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Abstract

ASJC Scopus subject areas

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