AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Toshio Nishida, Toshiki Makimoto, Hisao Saito, Tomoyuki Ban

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

The GaN-free UV-LED structure was applied to a bulk AlN substrate which has high thermal conductivity. The potential of this structure to the high current injection operation was confirmed. The output power linearly increased up to 300 mA and this saturation current is about twice that of the LED grown on sapphire substrate. The emission spectrum was found to be stable.

Original languageEnglish
Pages (from-to)1002-1003
Number of pages2
JournalApplied Physics Letters
Volume84
Issue number6
DOIs
Publication statusPublished - 2004 Feb 9
Externally publishedYes

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ultraviolet radiation
light emitting diodes
high current
sapphire
emission spectra
thermal conductivity
injection
saturation
output

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates. / Nishida, Toshio; Makimoto, Toshiki; Saito, Hisao; Ban, Tomoyuki.

In: Applied Physics Letters, Vol. 84, No. 6, 09.02.2004, p. 1002-1003.

Research output: Contribution to journalArticle

Nishida, Toshio ; Makimoto, Toshiki ; Saito, Hisao ; Ban, Tomoyuki. / AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates. In: Applied Physics Letters. 2004 ; Vol. 84, No. 6. pp. 1002-1003.
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