AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Toshio Nishida, Toshiki Makimoto, Hisao Saito, Tomoyuki Ban

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The GaN-free UV-LED structure was applied to a bulk AlN substrate which has high thermal conductivity. The potential of this structure to the high current injection operation was confirmed. The output power linearly increased up to 300 mA and this saturation current is about twice that of the LED grown on sapphire substrate. The emission spectrum was found to be stable.

Original languageEnglish
Pages (from-to)1002-1003
Number of pages2
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2004 Feb 9


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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