The GaN-free UV-LED structure was applied to a bulk AlN substrate which has high thermal conductivity. The potential of this structure to the high current injection operation was confirmed. The output power linearly increased up to 300 mA and this saturation current is about twice that of the LED grown on sapphire substrate. The emission spectrum was found to be stable.
|Number of pages||2|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Feb 9|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)