Alignment and switching behaviors of liquid crystal on a-Si Ox thin films deposited by a filtered cathodic arc process

P. J. Martin*, A. Bendavid, C. Comte, H. Miyata, Y. Asao, Y. Ishida, A. Sakai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

A new method is described for the preparation of silicon oxide layers, which produces vertical alignment of liquid crystal with controlled pretilt angles, by a reactive filtered cathodic arc deposition under oblique incidence geometry. The pretilt angle is dependent on the angle of deposition, but is not simply caused by the surface roughness. The achievable pretilt angle by this method is ∼5.5°, which allows uniform switching behavior under an applied electric field.

Original languageEnglish
Article number063516
JournalApplied Physics Letters
Volume91
Issue number6
DOIs
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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