Alignment-free process for asymmetric contact electrodes and their application in light-emitting organic field-effect transistors

Tomo Sakanoue, Masayuki Yahiro, Chihaya Adachi, Jeremy H. Burroughes, Yoshiaki Oku, Noriyuki Shimoji, Takayoshi Takahashi, Akio Toshimitsu

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Abstract

We developed an alignment-free process for asymmetric contacts of Au and Al and applied it to light-emitting organic field-effect transistors. Because electrons were injected efficiently from Al contacts, the emission intensity and onset voltages for light were significantly better than those in a device with conventional AuCr contacts. Moreover, a device with 1 μm channel length asymmetric contacts of Au and Al showed about 50 times higher current than that of the device with conventional AuCr contacts. This significant improvement can be ascribed to both dual space-charge formation of holes and electrons and low carrier injection barriers.

Original languageEnglish
Article number053505
JournalApplied Physics Letters
Volume92
Issue number5
DOIs
Publication statusPublished - 2008
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sakanoue, T., Yahiro, M., Adachi, C., Burroughes, J. H., Oku, Y., Shimoji, N., Takahashi, T., & Toshimitsu, A. (2008). Alignment-free process for asymmetric contact electrodes and their application in light-emitting organic field-effect transistors. Applied Physics Letters, 92(5), [053505]. https://doi.org/10.1063/1.2839895