All-round micro sheath flow formation to realize complex cross sections by simply stacked PDMs structures

Donghyun Yoon, Lisa Ariyoshi, Daiki Tanaka, Tetsushi Sekiguchi, Shuichi Shoji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This research proposed a sheath flow formation method for complex 3D structure such as multi-core and multi-sheath using multi-stacked PDMS units. Cross sectional shape of the flow and the number of sheath layer were defined simply by combination of different PDMS units. The stacked PDMS units allowed independent fluid injection of different layers and the short sheath area realized low diffusion between each layer. Furthermore, the proposed 3D device fabrication method requires only one point alignment. The sheath flow formation method is useful for wide applications which require fiber materials of specific cross sectional shapes and layers.

Original languageEnglish
Title of host publicationMEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages141-144
Number of pages4
Volume2016-February
ISBN (Electronic)9781509019731
DOIs
Publication statusPublished - 2016 Feb 26
Event29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016 - Shanghai, China
Duration: 2016 Jan 242016 Jan 28

Other

Other29th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2016
CountryChina
CityShanghai
Period16/1/2416/1/28

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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    Yoon, D., Ariyoshi, L., Tanaka, D., Sekiguchi, T., & Shoji, S. (2016). All-round micro sheath flow formation to realize complex cross sections by simply stacked PDMs structures. In MEMS 2016 - 29th IEEE International Conference on Micro Electro Mechanical Systems (Vol. 2016-February, pp. 141-144). [7421578] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMSYS.2016.7421578