Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Tamotsu Hashizume, Sanguan Anantathanasarn, Noboru Negoro, Eiichi Sano, Hideki Hasegawa, Kazuhide Kumakura, Toshiki Makimoto

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number6 B
Publication statusPublished - 2004 Jun 15
Externally publishedYes

Fingerprint

High electron mobility transistors
barrier layers
field effect transistors
Drain current
Surface potential
MOSFET devices
Threshold voltage
leakage
threshold voltage

Keywords

  • AlO
  • AlGaN
  • GaN
  • HFET
  • Insulated gate
  • Normally-off

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers. / Hashizume, Tamotsu; Anantathanasarn, Sanguan; Negoro, Noboru; Sano, Eiichi; Hasegawa, Hideki; Kumakura, Kazuhide; Makimoto, Toshiki.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 6 B, 15.06.2004.

Research output: Contribution to journalArticle

Hashizume, Tamotsu ; Anantathanasarn, Sanguan ; Negoro, Noboru ; Sano, Eiichi ; Hasegawa, Hideki ; Kumakura, Kazuhide ; Makimoto, Toshiki. / Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers. In: Japanese Journal of Applied Physics, Part 2: Letters. 2004 ; Vol. 43, No. 6 B.
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AU - Anantathanasarn, Sanguan

AU - Negoro, Noboru

AU - Sano, Eiichi

AU - Hasegawa, Hideki

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

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