Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Tamotsu Hashizume; Sanguan Anantathanasarn; Noboru Negoro; Eiichi Sano; Hideki Hasegawa; Kazuhide Kumakura; Toshiki Makimoto

doi:10.1143/jjap.43.l777

Al₂O₃ insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Tamotsu Hashizume^*, Sanguan Anantathanasarn, Noboru Negoro, Eiichi Sano, Hideki Hasegawa, Kazuhide Kumakura, Toshiki Makimoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

Abstract

An Al₂O₃ insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al_0.2Ga_0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al₂O₃ IG device showed successful gate control of drain current up to V_GS = +4V without leakage problems. The threshold voltage in the Al₂O₃ IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

Original language	English
Pages (from-to)	L777-L779
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	6 B
DOIs	https://doi.org/10.1143/jjap.43.l777
Publication status	Published - 2004 Jun 15
Externally published	Yes

Keywords

AlGaN
AlO
GaN
HFET
Insulated gate
Normally-off

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.43.l777

Cite this

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title = "Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers",

abstract = "An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.",

keywords = "AlGaN, AlO, GaN, HFET, Insulated gate, Normally-off",

author = "Tamotsu Hashizume and Sanguan Anantathanasarn and Noboru Negoro and Eiichi Sano and Hideki Hasegawa and Kazuhide Kumakura and Toshiki Makimoto",

year = "2004",

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doi = "10.1143/jjap.43.l777",

language = "English",

volume = "43",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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TY - JOUR

T1 - Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

AU - Hashizume, Tamotsu

AU - Anantathanasarn, Sanguan

AU - Negoro, Noboru

AU - Sano, Eiichi

AU - Hasegawa, Hideki

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

PY - 2004/6/15

Y1 - 2004/6/15

N2 - An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

AB - An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

KW - AlGaN

KW - AlO

KW - GaN

KW - HFET

KW - Insulated gate

KW - Normally-off

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