Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

Tamotsu Hashizume, Sanguan Anantathanasarn, Noboru Negoro, Eiichi Sano, Hideki Hasegawa, Kazuhide Kumakura, Toshiki Makimoto

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72 Citations (Scopus)

Abstract

An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to VGS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

Original languageEnglish
Pages (from-to)L777-L779
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number6 B
Publication statusPublished - 2004 Jun 15

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Keywords

  • AlGaN
  • AlO
  • GaN
  • HFET
  • Insulated gate
  • Normally-off

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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