Al2O3/Si3N4 insulated gate channel-doped AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure: Low gate leakage current with high transconductance

Narihiko Maeda, Takashi Makimura, Chengxin Wang, Masanobu Hiroki, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

An advanced structure of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been proposed and fabricated, which is characterized by the following structural features: (i) a metal-insulator-semiconductor (MIS) structure using an Al2O3/Si3N4 bilayer gate insulator to reduce the gate leakage current, (ii) a thin AlGaN barrier with a doped channel to simultaneously obtain the high transconductance and high drain current, and (iii) a regrown ohmic structure to reduce the contact resistance. The fabricated devices have been proved to exhibit attractive characteristics such as low gate leakage current, low contact resistance, high drain current, and high transconductance. An HFET with a gate length of 0.1 urn has exhibited a gate leakage current density of below 10 -4 A/mm even at a gate voltage of +3 V. It has also exhibited a low contact resistance of 0.3 Ωmm, a high maximum drain current density of 1.23 A/mm, and a high transconductance of 280 mS/ mm, which is the highest transconductance ever reported in the category of MIS-HFETs. The cutoff frequency and maximum oscillation frequency, measured with the pad capacitances included, were 52 and 75 GHz, respectively. The proposed structure has thus been proved to be effective in further improving the device performance in GaN-based HFETs.

Original languageEnglish
Pages (from-to)2747-2750
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr
Externally publishedYes

Fingerprint

Transconductance
High electron mobility transistors
transconductance
Leakage currents
Drain current
leakage
Contact resistance
field effect transistors
contact resistance
Current density
MIS (semiconductors)
Semiconductor materials
high current
Cutoff frequency
Metals
current density
Capacitance
low currents
Electric potential
cut-off

Keywords

  • AlO/SiNgate insulator
  • Channel doped
  • GaN
  • MIS-HFET
  • Regrown ohmic

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Al2O3/Si3N4 insulated gate channel-doped AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure : Low gate leakage current with high transconductance. / Maeda, Narihiko; Makimura, Takashi; Wang, Chengxin; Hiroki, Masanobu; Makimoto, Toshiki; Kobayashi, Takashi; Enoki, Takatomo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 B, 04.2005, p. 2747-2750.

Research output: Contribution to journalArticle

@article{3b88300985df44b9afc693f5ff0689cd,
title = "Al2O3/Si3N4 insulated gate channel-doped AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure: Low gate leakage current with high transconductance",
abstract = "An advanced structure of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been proposed and fabricated, which is characterized by the following structural features: (i) a metal-insulator-semiconductor (MIS) structure using an Al2O3/Si3N4 bilayer gate insulator to reduce the gate leakage current, (ii) a thin AlGaN barrier with a doped channel to simultaneously obtain the high transconductance and high drain current, and (iii) a regrown ohmic structure to reduce the contact resistance. The fabricated devices have been proved to exhibit attractive characteristics such as low gate leakage current, low contact resistance, high drain current, and high transconductance. An HFET with a gate length of 0.1 urn has exhibited a gate leakage current density of below 10 -4 A/mm even at a gate voltage of +3 V. It has also exhibited a low contact resistance of 0.3 Ωmm, a high maximum drain current density of 1.23 A/mm, and a high transconductance of 280 mS/ mm, which is the highest transconductance ever reported in the category of MIS-HFETs. The cutoff frequency and maximum oscillation frequency, measured with the pad capacitances included, were 52 and 75 GHz, respectively. The proposed structure has thus been proved to be effective in further improving the device performance in GaN-based HFETs.",
keywords = "AlO/SiNgate insulator, Channel doped, GaN, MIS-HFET, Regrown ohmic",
author = "Narihiko Maeda and Takashi Makimura and Chengxin Wang and Masanobu Hiroki and Toshiki Makimoto and Takashi Kobayashi and Takatomo Enoki",
year = "2005",
month = "4",
doi = "10.1143/JJAP.44.2747",
language = "English",
volume = "44",
pages = "2747--2750",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 B",

}

TY - JOUR

T1 - Al2O3/Si3N4 insulated gate channel-doped AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

T2 - Low gate leakage current with high transconductance

AU - Maeda, Narihiko

AU - Makimura, Takashi

AU - Wang, Chengxin

AU - Hiroki, Masanobu

AU - Makimoto, Toshiki

AU - Kobayashi, Takashi

AU - Enoki, Takatomo

PY - 2005/4

Y1 - 2005/4

N2 - An advanced structure of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been proposed and fabricated, which is characterized by the following structural features: (i) a metal-insulator-semiconductor (MIS) structure using an Al2O3/Si3N4 bilayer gate insulator to reduce the gate leakage current, (ii) a thin AlGaN barrier with a doped channel to simultaneously obtain the high transconductance and high drain current, and (iii) a regrown ohmic structure to reduce the contact resistance. The fabricated devices have been proved to exhibit attractive characteristics such as low gate leakage current, low contact resistance, high drain current, and high transconductance. An HFET with a gate length of 0.1 urn has exhibited a gate leakage current density of below 10 -4 A/mm even at a gate voltage of +3 V. It has also exhibited a low contact resistance of 0.3 Ωmm, a high maximum drain current density of 1.23 A/mm, and a high transconductance of 280 mS/ mm, which is the highest transconductance ever reported in the category of MIS-HFETs. The cutoff frequency and maximum oscillation frequency, measured with the pad capacitances included, were 52 and 75 GHz, respectively. The proposed structure has thus been proved to be effective in further improving the device performance in GaN-based HFETs.

AB - An advanced structure of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been proposed and fabricated, which is characterized by the following structural features: (i) a metal-insulator-semiconductor (MIS) structure using an Al2O3/Si3N4 bilayer gate insulator to reduce the gate leakage current, (ii) a thin AlGaN barrier with a doped channel to simultaneously obtain the high transconductance and high drain current, and (iii) a regrown ohmic structure to reduce the contact resistance. The fabricated devices have been proved to exhibit attractive characteristics such as low gate leakage current, low contact resistance, high drain current, and high transconductance. An HFET with a gate length of 0.1 urn has exhibited a gate leakage current density of below 10 -4 A/mm even at a gate voltage of +3 V. It has also exhibited a low contact resistance of 0.3 Ωmm, a high maximum drain current density of 1.23 A/mm, and a high transconductance of 280 mS/ mm, which is the highest transconductance ever reported in the category of MIS-HFETs. The cutoff frequency and maximum oscillation frequency, measured with the pad capacitances included, were 52 and 75 GHz, respectively. The proposed structure has thus been proved to be effective in further improving the device performance in GaN-based HFETs.

KW - AlO/SiNgate insulator

KW - Channel doped

KW - GaN

KW - MIS-HFET

KW - Regrown ohmic

UR - http://www.scopus.com/inward/record.url?scp=21244478559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21244478559&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.2747

DO - 10.1143/JJAP.44.2747

M3 - Article

AN - SCOPUS:21244478559

VL - 44

SP - 2747

EP - 2750

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -