Al2O3/Si3N4 insulated gate channel-doped AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure: Low gate leakage current with high transconductance

Narihiko Maeda*, Takashi Makimura, Chengxin Wang, Masanobu Hiroki, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki

*Corresponding author for this work

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