Aluminum nitride deep-ultraviolet light-emitting diodes

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have successfully fabricated an aluminum nitride light-emitting diode (LED) and observed ultraviolet light with a wavelength of 210 nm. This is the shortest wavelength ever observed from any semiconductor. This LED represents a major step towards replacing large, toxic, and low-efficiency gas light sources with compact, harmless, and high-efficiency semiconductor light sources. The application fields of these LEDs include environmental protection, nanotechnology, and information technology.

Original languageEnglish
Pages (from-to)54-58
Number of pages5
JournalNTT Technical Review
Volume4
Issue number12
Publication statusPublished - 2006 Dec
Externally publishedYes

Fingerprint

Aluminum nitride
Light emitting diodes
Light sources
Semiconductor materials
Wavelength
Environmental protection
Nanotechnology
Information technology
Gases
Ultraviolet Rays

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Aluminum nitride deep-ultraviolet light-emitting diodes. / Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki.

In: NTT Technical Review, Vol. 4, No. 12, 12.2006, p. 54-58.

Research output: Contribution to journalArticle

Taniyasu, Yoshitaka ; Kasu, Makoto ; Makimoto, Toshiki. / Aluminum nitride deep-ultraviolet light-emitting diodes. In: NTT Technical Review. 2006 ; Vol. 4, No. 12. pp. 54-58.
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