Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal

Satria Zulkarnaen Bisri, Tetsuo Takahashi, Taishi Takenobu, Masayuki Yahiro, Chihaya Adachi, Yoshihiro Iwasa

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number20-24
DOIs
Publication statusPublished - 2007 Jun 15
Externally publishedYes

Fingerprint

Field effect transistors
field effect transistors
Single crystals
single crystals
Charge injection
Electrodes
Hole mobility
electrodes
Electron mobility
hole mobility
electron mobility
crystal field theory
injection
Metals
metals

Keywords

  • Ambipolar transistor
  • Condensed aromatic hydrocarbon
  • Electrodes
  • Electron traps
  • Molecular crystal
  • Organic field-effect transistor

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal. / Bisri, Satria Zulkarnaen; Takahashi, Tetsuo; Takenobu, Taishi; Yahiro, Masayuki; Adachi, Chihaya; Iwasa, Yoshihiro.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 20-24, 15.06.2007.

Research output: Contribution to journalArticle

Bisri, Satria Zulkarnaen ; Takahashi, Tetsuo ; Takenobu, Taishi ; Yahiro, Masayuki ; Adachi, Chihaya ; Iwasa, Yoshihiro. / Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal. In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 20-24.
@article{271fada0d84d45128640110cdbd0322d,
title = "Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal",
abstract = "An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.",
keywords = "Ambipolar transistor, Condensed aromatic hydrocarbon, Electrodes, Electron traps, Molecular crystal, Organic field-effect transistor",
author = "Bisri, {Satria Zulkarnaen} and Tetsuo Takahashi and Taishi Takenobu and Masayuki Yahiro and Chihaya Adachi and Yoshihiro Iwasa",
year = "2007",
month = "6",
day = "15",
doi = "10.1143/JJAP.46.L596",
language = "English",
volume = "46",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "20-24",

}

TY - JOUR

T1 - Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal

AU - Bisri, Satria Zulkarnaen

AU - Takahashi, Tetsuo

AU - Takenobu, Taishi

AU - Yahiro, Masayuki

AU - Adachi, Chihaya

AU - Iwasa, Yoshihiro

PY - 2007/6/15

Y1 - 2007/6/15

N2 - An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

AB - An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

KW - Ambipolar transistor

KW - Condensed aromatic hydrocarbon

KW - Electrodes

KW - Electron traps

KW - Molecular crystal

KW - Organic field-effect transistor

UR - http://www.scopus.com/inward/record.url?scp=34547838372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547838372&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.L596

DO - 10.1143/JJAP.46.L596

M3 - Article

AN - SCOPUS:34547838372

VL - 46

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 20-24

ER -