Ambipolar field-effect transistor of high photoluminescent material tetraphenylpyrene (TPPy) single crystal

Satria Zulkarnaen Bisri, Tetsuo Takahashi, Taishi Takenobu, Masayuki Yahiro, Chihaya Adachi, Yoshihiro Iwasa

Research output: Contribution to journalArticle

32 Citations (Scopus)


An ambipolar field-effect transistor (FET) based on a 1,3,6,8- tetraphenylpyrene (TPPy) single crystal, a highly photoluminescent material, has been successfully fabricated. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics into the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10 -2cm2/(V·s) were achieved using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number20-24
Publication statusPublished - 2007 Jun 15
Externally publishedYes



  • Ambipolar transistor
  • Condensed aromatic hydrocarbon
  • Electrodes
  • Electron traps
  • Molecular crystal
  • Organic field-effect transistor

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this