Ambipolar light-emitting organic field-effect transistors using a wide-band-gap blue-emitting small molecule

Tomo Sakanoue, Masayuki Yahiro, Chihaya Adachi, Hiroyuki Uchiuzou, Takayoshi Takahashi, Akio Toshimitsu

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The authors applied a wide-band-gap (2.9 eV) molecule of 4,- 4′ -bis(styryl)biphenyl (BSBP) as an active layer in light-emitting organic field-effect transistors. They found that BSBP provided both relatively high field-effect hole mobility of 0.01 cm2 V s and photoluminescence efficiency of 20% in thin film. They achieved ambipolar operation by without breaking vacuum through devices' preparation and measurements, applying aluminum contacts, and inserting a hydroxyl-free poly(methylmethacrylate) layer, and light emission was observed when the device was operated in the ambipolar mode. The results presented here will open the way to fabricating efficient light-emitting transistors with high mobility.

Original languageEnglish
Article number171118
JournalApplied Physics Letters
Volume90
Issue number17
DOIs
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Sakanoue, T., Yahiro, M., Adachi, C., Uchiuzou, H., Takahashi, T., & Toshimitsu, A. (2007). Ambipolar light-emitting organic field-effect transistors using a wide-band-gap blue-emitting small molecule. Applied Physics Letters, 90(17), [171118]. https://doi.org/10.1063/1.2734389