Ambipolar organic field-effect transistors based on rubrene single crystals

Tetsuo Takahashi, Taishi Takenobu, Jun Takeya, Yoshihiro Iwasa

Research output: Contribution to journalArticle

146 Citations (Scopus)

Abstract

We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p - and n -channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1× 10-2 cm2 V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.

Original languageEnglish
Article number033505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number3
DOIs
Publication statusPublished - 2006
Externally publishedYes

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field effect transistors
single crystals
hole mobility
electron mobility
electrons
transistors
traps
broadband
augmentation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ambipolar organic field-effect transistors based on rubrene single crystals. / Takahashi, Tetsuo; Takenobu, Taishi; Takeya, Jun; Iwasa, Yoshihiro.

In: Applied Physics Letters, Vol. 88, No. 3, 033505, 2006, p. 1-3.

Research output: Contribution to journalArticle

Takahashi, T, Takenobu, T, Takeya, J & Iwasa, Y 2006, 'Ambipolar organic field-effect transistors based on rubrene single crystals', Applied Physics Letters, vol. 88, no. 3, 033505, pp. 1-3. https://doi.org/10.1063/1.2166698
Takahashi, Tetsuo ; Takenobu, Taishi ; Takeya, Jun ; Iwasa, Yoshihiro. / Ambipolar organic field-effect transistors based on rubrene single crystals. In: Applied Physics Letters. 2006 ; Vol. 88, No. 3. pp. 1-3.
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