Ambipolar organic field-effect transistors based on rubrene single crystals

Tetsuo Takahashi, Taishi Takenobu, Jun Takeya, Yoshihiro Iwasa

Research output: Contribution to journalArticle

150 Citations (Scopus)

Abstract

We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The transistors operate in both the p - and n -channel regimes depending upon the bias conditions. Hole and electron mobilities of 1.8 and 1.1× 10-2 cm2 V s, respectively, were derived from saturated currents. The appearance of an electron enhancement mode in single crystals of wide-band-gap semiconductors (∼2.6 eV) is ascribed to the reduction of electron traps at the semiconductor-dielectric interface using a hydroxyl-free gate dielectric.

Original languageEnglish
Article number033505
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number3
DOIs
Publication statusPublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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