Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities

Shin Ichiro Noro, Taishi Takenobu, Yoshihiro Iwasa, Ho Chol Chang, Susumu Kitagawa, Tomoyuki Akutagawa, Takayoshi Nakamura

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

A report on the high-performance ambipolar operation in metal-organic thin film transistors (MOTFT) of semiconducting bis(o-diiminobenzosemiquinonate) nickel (II) complex and its derivative, is presented. The study used poly(methylmethacrylate) (PMMA) as the dielectric layer and calcium metal as the source and drain electrodes. A hydroxyl-free polymer or PMMA can decrease the number of electrons traps, while calcium metal with low work function can decrease the injection barrier of the electrons. It was observed during the study that high-performance ambipolar MOTFTs can be prepared by using metal complexes with narrow band gaps and less π-conjugated structures. The study concluded that these metal complexes can be used for the development of high-performance semiconductors.

Original languageEnglish
Pages (from-to)3399-3403
Number of pages5
JournalAdvanced Materials
Volume20
Issue number18
DOIs
Publication statusPublished - 2008 Sep 17
Externally publishedYes

Fingerprint

Hole mobility
Electron mobility
Thin film transistors
Methylmethacrylate
Metals
Coordination Complexes
Metal complexes
Calcium
Electron traps
Nickel
Hydroxyl Radical
Polymers
Energy gap
Semiconductor materials
Derivatives
Electrodes
Electrons

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Noro, S. I., Takenobu, T., Iwasa, Y., Chang, H. C., Kitagawa, S., Akutagawa, T., & Nakamura, T. (2008). Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities. Advanced Materials, 20(18), 3399-3403. https://doi.org/10.1002/adma.200800558

Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities. / Noro, Shin Ichiro; Takenobu, Taishi; Iwasa, Yoshihiro; Chang, Ho Chol; Kitagawa, Susumu; Akutagawa, Tomoyuki; Nakamura, Takayoshi.

In: Advanced Materials, Vol. 20, No. 18, 17.09.2008, p. 3399-3403.

Research output: Contribution to journalArticle

Noro, SI, Takenobu, T, Iwasa, Y, Chang, HC, Kitagawa, S, Akutagawa, T & Nakamura, T 2008, 'Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities', Advanced Materials, vol. 20, no. 18, pp. 3399-3403. https://doi.org/10.1002/adma.200800558
Noro, Shin Ichiro ; Takenobu, Taishi ; Iwasa, Yoshihiro ; Chang, Ho Chol ; Kitagawa, Susumu ; Akutagawa, Tomoyuki ; Nakamura, Takayoshi. / Ambipolar, single-component, metal-organic thin-film transistors with high and balanced hole and electron mobilities. In: Advanced Materials. 2008 ; Vol. 20, No. 18. pp. 3399-3403.
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