Abstract
This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O2, H2O, and N2O as the reactive gases. Experimental results show that the electrical properties of the N2O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N2O introduction into the deposition process, where the field mobility reach to 30.8 cm2 V-1 s-1, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.
| Original language | English |
|---|---|
| Article number | 023502 |
| Journal | Applied Physics Letters |
| Volume | 106 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2015 Jan 12 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases : Spatial distribution of thin film transistor performance. / Jia, Junjun; Torigoshi, Yoshifumi; Kawashima, Emi; Utsuno, Futoshi; Yano, Koki; Shigesato, Yuzo.
In: Applied Physics Letters, Vol. 106, No. 2, 023502, 12.01.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases
T2 - Spatial distribution of thin film transistor performance
AU - Jia, Junjun
AU - Torigoshi, Yoshifumi
AU - Kawashima, Emi
AU - Utsuno, Futoshi
AU - Yano, Koki
AU - Shigesato, Yuzo
PY - 2015/1/12
Y1 - 2015/1/12
N2 - This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O2, H2O, and N2O as the reactive gases. Experimental results show that the electrical properties of the N2O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N2O introduction into the deposition process, where the field mobility reach to 30.8 cm2 V-1 s-1, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.
AB - This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O2, H2O, and N2O as the reactive gases. Experimental results show that the electrical properties of the N2O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N2O introduction into the deposition process, where the field mobility reach to 30.8 cm2 V-1 s-1, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.
UR - http://www.scopus.com/inward/record.url?scp=84923771257&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84923771257&partnerID=8YFLogxK
U2 - 10.1063/1.4905654
DO - 10.1063/1.4905654
M3 - Article
AN - SCOPUS:84923771257
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 2
M1 - 023502
ER -