Amplifying characteristics of 1.55-μm polarization-insensitive SOAs with MQW and strained-bulk active layers for device application

Masayuki Itoh, Yasuo Shibata, Takaaki Kakitsuka, Yoshiaki Kadota, Hideo Sugiura, Yuichi Tohmori

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Fundamental amplifying characteristics of 1.55-μm semiconductor optical amplifiers (SOAs) that contain multiquantum well (MQW) active layers with an optimized tensile strain or bulk active layers with various tensile strains were investigated. Both types of SOAs have their own merits and demerits. For device application in networks, driving current and wavelength in the low-polarization-sensitivity condition are very important, but they have not been clarified yet. The results of the present investigation clarify the driving current and wavelength characteristics of low-polarization-sensitivity SOAs with MQW and strained-bulk active layers. The low-polarization-sensitivity condition of SOAs with a strained-bulk active layer is shown to have a very wide range of driving current and wavelength for network-device application. These results, with other requirements taken into account, provide guidelines for choosing the type of SOA most suitable for a given application.

Original languageEnglish
Article number1605352
Pages (from-to)1478-1485
Number of pages8
JournalJournal of Lightwave Technology
Volume24
Issue number3
DOIs
Publication statusPublished - 2006 Mar
Externally publishedYes

Keywords

  • Amplifying characteristics
  • Device application
  • Low-polarization-sensitivity condition
  • Multiquantum well (MQW)
  • Polarization-insensitive semiconductor optical amplifier (SOA)
  • Strained bulk

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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