Abstract
Amplitude/phase temperature compensation attenuators have been developed. The circuits are based on new variable-Q field-effect transistor resonators. By employing the configuration, the dynamic range of the attenuation and the phase-shift can be flexibly determined. To verify this methodology, we have fabricated a low phase-shift temperature compensation attenuator and an amplitude/phase temperature compensation attenuator with monolithic microwave integrated circuit technology. The low phase-shift circuit achieved an attenuation dynamic range of 16.9 dB, a phase shift of 5.2°, and a minimum insertion loss of 4.5 dB in X-band over 75 °C temperature variation. The amplitude/phase compensation circuit achieved an attenuation dynamic range of 11.7 dB, a phase shift of +37°, and a minimum insertion loss of 4.9 dB in X-band over 75 °C temperature variation.
| Original language | English |
|---|---|
| Article number | 4682592 |
| Pages (from-to) | 3058-3065 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 56 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2008 Dec |
| Externally published | Yes |
Keywords
- Attenuator
- Field-effect transistor (FET)
- Monolithic microwave integrated circuit (MMIC)
- Schottky diodes
- Temperature compensation
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering