Amplitude/phase temperature compensation attenuators with variable-Q FET Resonators

Masatake Hangai*, Hideki Asao, Morishige Hieda, Mamiko Yamaguchi, Moriyasu Miyazaki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Amplitude/phase temperature compensation attenuators have been developed. The circuits are based on new variable-Q field-effect transistor resonators. By employing the configuration, the dynamic range of the attenuation and the phase-shift can be flexibly determined. To verify this methodology, we have fabricated a low phase-shift temperature compensation attenuator and an amplitude/phase temperature compensation attenuator with monolithic microwave integrated circuit technology. The low phase-shift circuit achieved an attenuation dynamic range of 16.9 dB, a phase shift of 5.2°, and a minimum insertion loss of 4.5 dB in X-band over 75 °C temperature variation. The amplitude/phase compensation circuit achieved an attenuation dynamic range of 11.7 dB, a phase shift of +37°, and a minimum insertion loss of 4.9 dB in X-band over 75 °C temperature variation.

Original languageEnglish
Article number4682592
Pages (from-to)3058-3065
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume56
Issue number12
DOIs
Publication statusPublished - 2008 Dec
Externally publishedYes

Keywords

  • Attenuator
  • Field-effect transistor (FET)
  • Monolithic microwave integrated circuit (MMIC)
  • Schottky diodes
  • Temperature compensation

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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