An 18.5ns 128Mb SOI DRAM with a floating body cell

Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe

Research output: Contribution to journalConference article

11 Citations (Scopus)
Original languageEnglish
Pages (from-to)458-459+609
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume48
Publication statusPublished - 2005 Dec 6
Event2005 IEEE International Solid-State Circuits Conference, ISSCC - San Francisco, CA, United States
Duration: 2005 Feb 62005 Feb 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ohsawa, T., Fujita, K., Hatsuda, K., Higashi, T., Morikado, M., Minami, Y., Shino, T., Nakajima, H., Inoh, K., Hamamoto, T., & Watanabe, S. (2005). An 18.5ns 128Mb SOI DRAM with a floating body cell. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 48, 458-459+609.