An 18.5ns 128Mb SOI DRAM with a floating body cell

Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Tomoki Higashi, Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe

Research output: Contribution to journalArticle

11 Citations (Scopus)
Original languageEnglish
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume48
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

Dynamic random access storage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ohsawa, T., Fujita, K., Hatsuda, K., Higashi, T., Morikado, M., Minami, Y., ... Watanabe, S. (2005). An 18.5ns 128Mb SOI DRAM with a floating body cell. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 48.

An 18.5ns 128Mb SOI DRAM with a floating body cell. / Ohsawa, Takashi; Fujita, Katsuyuki; Hatsuda, Kosuke; Higashi, Tomoki; Morikado, Mutsuo; Minami, Yoshihiro; Shino, Tomoaki; Nakajima, Hiroomi; Inoh, Kazumi; Hamamoto, Takeshi; Watanabe, Shigeyoshi.

In: Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Vol. 48, 2005.

Research output: Contribution to journalArticle

Ohsawa, T, Fujita, K, Hatsuda, K, Higashi, T, Morikado, M, Minami, Y, Shino, T, Nakajima, H, Inoh, K, Hamamoto, T & Watanabe, S 2005, 'An 18.5ns 128Mb SOI DRAM with a floating body cell', Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 48.
Ohsawa, Takashi ; Fujita, Katsuyuki ; Hatsuda, Kosuke ; Higashi, Tomoki ; Morikado, Mutsuo ; Minami, Yoshihiro ; Shino, Tomoaki ; Nakajima, Hiroomi ; Inoh, Kazumi ; Hamamoto, Takeshi ; Watanabe, Shigeyoshi. / An 18.5ns 128Mb SOI DRAM with a floating body cell. In: Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2005 ; Vol. 48.
@article{b741b4ca195542769c707c56183f6485,
title = "An 18.5ns 128Mb SOI DRAM with a floating body cell",
author = "Takashi Ohsawa and Katsuyuki Fujita and Kosuke Hatsuda and Tomoki Higashi and Mutsuo Morikado and Yoshihiro Minami and Tomoaki Shino and Hiroomi Nakajima and Kazumi Inoh and Takeshi Hamamoto and Shigeyoshi Watanabe",
year = "2005",
language = "English",
volume = "48",
journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",
issn = "0193-6530",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - An 18.5ns 128Mb SOI DRAM with a floating body cell

AU - Ohsawa, Takashi

AU - Fujita, Katsuyuki

AU - Hatsuda, Kosuke

AU - Higashi, Tomoki

AU - Morikado, Mutsuo

AU - Minami, Yoshihiro

AU - Shino, Tomoaki

AU - Nakajima, Hiroomi

AU - Inoh, Kazumi

AU - Hamamoto, Takeshi

AU - Watanabe, Shigeyoshi

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=28144449075&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28144449075&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:28144449075

VL - 48

JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

JF - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SN - 0193-6530

ER -