Abstract
A low-power CMOS W-band amplifier that feeds on a 0.5-V supply is presented. It achieves a peak gain of 24.1 dB and consumes 12mW. This was made possible by (a) the use of Mie Fujitsu Semiconductor 55-nm CMOS technology with deeply depleted channel (DDC) MOSFETs, which are meant specifically for ultralow-power designs with sub-1V supply voltage, (b) high-fmax transistor layout, which gives about 1 dB higher gain in the W-band than the ordinary layout, and (c) single-ended negative-capacitance feedback technique, which gives wideband gain boosting comparable to its differential counterpart (with cross-coupled feedback capacitors) with half the power consumption of the latter.
| Original language | English |
|---|---|
| Title of host publication | RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 308-311 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509046263 |
| DOIs | |
| Publication status | Published - 2017 Jul 5 |
| Externally published | Yes |
| Event | 2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017 - Honolulu, United States Duration: 2017 Jun 4 → 2017 Jun 6 |
Other
| Other | 2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017 |
|---|---|
| Country | United States |
| City | Honolulu |
| Period | 17/6/4 → 17/6/6 |
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Keywords
- Feedback
- gain-boosting
- millimeter-wave
ASJC Scopus subject areas
- Engineering(all)
Cite this
An 80-106 GHz CMOS amplifier with 0.5V supply voltage. / Katayama, Kosuke; Amakawa, S.; Takano, K.; Yoshida, T.; Fujishima, M.; Hisamitsu, K.; Takatsuka, H.
RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium. Institute of Electrical and Electronics Engineers Inc., 2017. p. 308-311 7969079.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - An 80-106 GHz CMOS amplifier with 0.5V supply voltage
AU - Katayama, Kosuke
AU - Amakawa, S.
AU - Takano, K.
AU - Yoshida, T.
AU - Fujishima, M.
AU - Hisamitsu, K.
AU - Takatsuka, H.
PY - 2017/7/5
Y1 - 2017/7/5
N2 - A low-power CMOS W-band amplifier that feeds on a 0.5-V supply is presented. It achieves a peak gain of 24.1 dB and consumes 12mW. This was made possible by (a) the use of Mie Fujitsu Semiconductor 55-nm CMOS technology with deeply depleted channel (DDC) MOSFETs, which are meant specifically for ultralow-power designs with sub-1V supply voltage, (b) high-fmax transistor layout, which gives about 1 dB higher gain in the W-band than the ordinary layout, and (c) single-ended negative-capacitance feedback technique, which gives wideband gain boosting comparable to its differential counterpart (with cross-coupled feedback capacitors) with half the power consumption of the latter.
AB - A low-power CMOS W-band amplifier that feeds on a 0.5-V supply is presented. It achieves a peak gain of 24.1 dB and consumes 12mW. This was made possible by (a) the use of Mie Fujitsu Semiconductor 55-nm CMOS technology with deeply depleted channel (DDC) MOSFETs, which are meant specifically for ultralow-power designs with sub-1V supply voltage, (b) high-fmax transistor layout, which gives about 1 dB higher gain in the W-band than the ordinary layout, and (c) single-ended negative-capacitance feedback technique, which gives wideband gain boosting comparable to its differential counterpart (with cross-coupled feedback capacitors) with half the power consumption of the latter.
KW - Feedback
KW - gain-boosting
KW - millimeter-wave
UR - http://www.scopus.com/inward/record.url?scp=85026882593&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85026882593&partnerID=8YFLogxK
U2 - 10.1109/RFIC.2017.7969079
DO - 10.1109/RFIC.2017.7969079
M3 - Conference contribution
AN - SCOPUS:85026882593
SP - 308
EP - 311
BT - RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium
PB - Institute of Electrical and Electronics Engineers Inc.
ER -