Abstract
A low-power CMOS W-band amplifier that feeds on a 0.5-V supply is presented. It achieves a peak gain of 24.1 dB and consumes 12mW. This was made possible by (a) the use of Mie Fujitsu Semiconductor 55-nm CMOS technology with deeply depleted channel (DDC) MOSFETs, which are meant specifically for ultralow-power designs with sub-1V supply voltage, (b) high-fmax transistor layout, which gives about 1 dB higher gain in the W-band than the ordinary layout, and (c) single-ended negative-capacitance feedback technique, which gives wideband gain boosting comparable to its differential counterpart (with cross-coupled feedback capacitors) with half the power consumption of the latter.
| Original language | English |
|---|---|
| Title of host publication | RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 308-311 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781509046263 |
| DOIs | |
| Publication status | Published - 2017 Jul 5 |
| Externally published | Yes |
| Event | 2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017 - Honolulu, United States Duration: 2017 Jun 4 → 2017 Jun 6 |
Other
| Other | 2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017 |
|---|---|
| Country | United States |
| City | Honolulu |
| Period | 17/6/4 → 17/6/6 |
Keywords
- Feedback
- gain-boosting
- millimeter-wave
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Katayama, K., Amakawa, S., Takano, K., Yoshida, T., Fujishima, M., Hisamitsu, K., & Takatsuka, H. (2017). An 80-106 GHz CMOS amplifier with 0.5V supply voltage. In RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium (pp. 308-311). [7969079] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIC.2017.7969079