An all-solid-state pH sensor employing fluorine-terminated polycrystalline boron-doped diamond as a pH-insensitive solution-gate field-effect transistor

Yukihiro Shintani*, Mikinori Kobayashi, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

Original languageEnglish
Article number1040
JournalSensors (Switzerland)
Volume17
Issue number5
DOIs
Publication statusPublished - 2017 May 5

Keywords

  • All-solid-state pH sensor
  • Electrolyte-solution-gate field-effect transistor
  • Fluorine-termination
  • PH-insensitivity
  • Polycrystalline boron-doped diamond

ASJC Scopus subject areas

  • Analytical Chemistry
  • Biochemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering

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