An all-solid-state pH sensor employing fluorine-terminated polycrystalline boron-doped diamond as a pH-insensitive solution-gate field-effect transistor

Yukihiro Shintani, Mikinori Kobayashi, Hiroshi Kawarada

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    A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transistor) sensing, a sensitivity of 27 mv/pH was obtained in the pH range of 2–10; therefore, it demonstrated excellent performance for an all-solid-state pH sensor with a pH-sensitive oxygen-terminated polycrystalline BDD SGFET and a platinum quasi-reference electrode, respectively.

    Original languageEnglish
    Article number1040
    JournalSensors (Switzerland)
    Issue number5
    Publication statusPublished - 2017 May 5



    • All-solid-state pH sensor
    • Electrolyte-solution-gate field-effect transistor
    • Fluorine-termination
    • PH-insensitivity
    • Polycrystalline boron-doped diamond

    ASJC Scopus subject areas

    • Analytical Chemistry
    • Atomic and Molecular Physics, and Optics
    • Biochemistry
    • Electrical and Electronic Engineering

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