An application of the dry liftoff method by molybdenum oxide sublimation to CMOS isolation

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Abstract

A CMOS isolation process using a dry liftoff is proposed in which a sputter-deposited SiO2 film is delineated by removing the Mo pattern underneath the SiO2 film making use of the sublimation of the molybdenum oxide. Test CMOS transistors were fabricated. No significant differences were observed in the characteristics of transistors fabricated by dry- and conventional wet-liftoff techniques.

Original languageEnglish
Pages (from-to)1138-1139
Number of pages2
JournalJapanese journal of applied physics
Volume25
Issue number7
DOIs
Publication statusPublished - 1986 Jul

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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