An electron-spectroscopic view of CVD diamond surface conductivity

S. Kono; M. Shiraishi; T. Goto; T. Abukawa; M. Tachiki; H. Kawarada

doi:10.1016/j.diamond.2004.11.011

An electron-spectroscopic view of CVD diamond surface conductivity

S. Kono^*, M. Shiraishi, T. Goto, T. Abukawa, M. Tachiki, H. Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Three diamond (001) samples were made by CVD growth on synthetic diamond substrates in a same batch of growth, for which sheet resistance in atmospheric environment was confirmed. A simple two-point probe method has been applied to the samples to measure sheet resistance in UHV of 0.2-50 MΩ/square. Soft X-ray-induced secondary electron spectroscopy has been used to determine the Fermi level position in UHV of the samples for which in-UHV sheet resistance values were known. The Fermi level as measured turned out to be 1.1±0.2 eV above the valence band top and stayed at the same position within ∼0.1 eV with the sheet resistance change of an order of 2. On the basis of these findings, a plausible model of surface conductivity of CVD diamond is suggested.

Original language	English
Pages (from-to)	459-465
Number of pages	7
Journal	Diamond and Related Materials
Volume	14
Issue number	3-7
DOIs	https://doi.org/10.1016/j.diamond.2004.11.011
Publication status	Published - 2005 Mar

Keywords

Diamond (001)
Diamond growth and characterisation
Secondary electron spectroscopy
Surface conductivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.diamond.2004.11.011

Cite this

@article{818528febe854036beeb5c6c1fe14021,

title = "An electron-spectroscopic view of CVD diamond surface conductivity",

abstract = "Three diamond (001) samples were made by CVD growth on synthetic diamond substrates in a same batch of growth, for which sheet resistance in atmospheric environment was confirmed. A simple two-point probe method has been applied to the samples to measure sheet resistance in UHV of 0.2-50 MΩ/square. Soft X-ray-induced secondary electron spectroscopy has been used to determine the Fermi level position in UHV of the samples for which in-UHV sheet resistance values were known. The Fermi level as measured turned out to be 1.1±0.2 eV above the valence band top and stayed at the same position within ∼0.1 eV with the sheet resistance change of an order of 2. On the basis of these findings, a plausible model of surface conductivity of CVD diamond is suggested.",

keywords = "Diamond (001), Diamond growth and characterisation, Secondary electron spectroscopy, Surface conductivity",

author = "S. Kono and M. Shiraishi and T. Goto and T. Abukawa and M. Tachiki and H. Kawarada",

note = "Funding Information: This work is partly supported by the Advanced Diamond Device Project of NEDO, Japan. Fruitful discussions with Dr. H. Okushi and with Dr. Y. Koide are acknowledged.",

year = "2005",

month = mar,

doi = "10.1016/j.diamond.2004.11.011",

language = "English",

volume = "14",

pages = "459--465",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "3-7",

}

TY - JOUR

T1 - An electron-spectroscopic view of CVD diamond surface conductivity

AU - Kono, S.

AU - Shiraishi, M.

AU - Goto, T.

AU - Abukawa, T.

AU - Tachiki, M.

AU - Kawarada, H.

N1 - Funding Information: This work is partly supported by the Advanced Diamond Device Project of NEDO, Japan. Fruitful discussions with Dr. H. Okushi and with Dr. Y. Koide are acknowledged.

PY - 2005/3

Y1 - 2005/3

N2 - Three diamond (001) samples were made by CVD growth on synthetic diamond substrates in a same batch of growth, for which sheet resistance in atmospheric environment was confirmed. A simple two-point probe method has been applied to the samples to measure sheet resistance in UHV of 0.2-50 MΩ/square. Soft X-ray-induced secondary electron spectroscopy has been used to determine the Fermi level position in UHV of the samples for which in-UHV sheet resistance values were known. The Fermi level as measured turned out to be 1.1±0.2 eV above the valence band top and stayed at the same position within ∼0.1 eV with the sheet resistance change of an order of 2. On the basis of these findings, a plausible model of surface conductivity of CVD diamond is suggested.

AB - Three diamond (001) samples were made by CVD growth on synthetic diamond substrates in a same batch of growth, for which sheet resistance in atmospheric environment was confirmed. A simple two-point probe method has been applied to the samples to measure sheet resistance in UHV of 0.2-50 MΩ/square. Soft X-ray-induced secondary electron spectroscopy has been used to determine the Fermi level position in UHV of the samples for which in-UHV sheet resistance values were known. The Fermi level as measured turned out to be 1.1±0.2 eV above the valence band top and stayed at the same position within ∼0.1 eV with the sheet resistance change of an order of 2. On the basis of these findings, a plausible model of surface conductivity of CVD diamond is suggested.

KW - Diamond (001)

KW - Diamond growth and characterisation

KW - Secondary electron spectroscopy

KW - Surface conductivity

UR - http://www.scopus.com/inward/record.url?scp=18444414593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18444414593&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2004.11.011

DO - 10.1016/j.diamond.2004.11.011

M3 - Article

AN - SCOPUS:18444414593

SN - 0925-9635

VL - 14

SP - 459

EP - 465

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-7

ER -

An electron-spectroscopic view of CVD diamond surface conductivity

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this