An electron-spectroscopic view of CVD diamond surface conductivity

S. Kono, M. Shiraishi, T. Goto, T. Abukawa, M. Tachiki, Hiroshi Kawarada

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    12 Citations (Scopus)

    Abstract

    Three diamond (001) samples were made by CVD growth on synthetic diamond substrates in a same batch of growth, for which sheet resistance in atmospheric environment was confirmed. A simple two-point probe method has been applied to the samples to measure sheet resistance in UHV of 0.2-50 MΩ/square. Soft X-ray-induced secondary electron spectroscopy has been used to determine the Fermi level position in UHV of the samples for which in-UHV sheet resistance values were known. The Fermi level as measured turned out to be 1.1±0.2 eV above the valence band top and stayed at the same position within ∼0.1 eV with the sheet resistance change of an order of 2. On the basis of these findings, a plausible model of surface conductivity of CVD diamond is suggested.

    Original languageEnglish
    Pages (from-to)459-465
    Number of pages7
    JournalDiamond and Related Materials
    Volume14
    Issue number3-7
    DOIs
    Publication statusPublished - 2005 Mar

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    Keywords

    • Diamond (001)
    • Diamond growth and characterisation
    • Secondary electron spectroscopy
    • Surface conductivity

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

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