TY - GEN
T1 - An Embedded SiC Module with Using NMPB Interconnection for Chevron Shaped Cu Lead and Electrodes
AU - Fukui, Naoki
AU - Koshiba, Keiko
AU - Miyazaki, Itaru
AU - Morisako, Isamu
AU - Iizuka, Tomonori
AU - Itose, Tomoya
AU - Hikita, Masayuki
AU - Kamimura, Rikiya
AU - Tatsumi, Kohei
N1 - Funding Information:
This work was partly supported by the Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), and “Next-generation power electronics/ (funding agency: NEDO)
Publisher Copyright:
© 2020 IEEE.
PY - 2020/6
Y1 - 2020/6
N2 - As for the IGBT power device based on Si used for the vehicle, the performance limit of the Si semiconductor has been pointed out, and the SiC semiconductor has been attracting attention as a next-generation semiconductor. The SiC semiconductor has advantages such as a wider band gap, a larger breakdown electric field, and high temperature operation (about 300 ° C.). If these features can be maximized, a SiC power semiconductor module that can be significantly improved in efficiency, downsized, and operable in a high-temperature environment as compared with a Si semiconductor can be more widely implemented.In this study, two sets of SiC-MOS and SiC-SBD devices are embedded in a ceramic substrate, and their electrodes and the copper electrodes of the substrate are interconnected by NMPB (Nickel Micro-plating Bonding) method, so that one-leg prototype inverter modules of a highly heat-resistant and ultra-small size (47x30x1.3mm) could be manufactured. The NMPB method is a technology that we have originally developed to connect a chip electrode and a lead formed in a chevron shape by Ni plating. High-temperature operation and excellent switching characteristics of the SiC power module were demonstrated.
AB - As for the IGBT power device based on Si used for the vehicle, the performance limit of the Si semiconductor has been pointed out, and the SiC semiconductor has been attracting attention as a next-generation semiconductor. The SiC semiconductor has advantages such as a wider band gap, a larger breakdown electric field, and high temperature operation (about 300 ° C.). If these features can be maximized, a SiC power semiconductor module that can be significantly improved in efficiency, downsized, and operable in a high-temperature environment as compared with a Si semiconductor can be more widely implemented.In this study, two sets of SiC-MOS and SiC-SBD devices are embedded in a ceramic substrate, and their electrodes and the copper electrodes of the substrate are interconnected by NMPB (Nickel Micro-plating Bonding) method, so that one-leg prototype inverter modules of a highly heat-resistant and ultra-small size (47x30x1.3mm) could be manufactured. The NMPB method is a technology that we have originally developed to connect a chip electrode and a lead formed in a chevron shape by Ni plating. High-temperature operation and excellent switching characteristics of the SiC power module were demonstrated.
KW - Chevron Shape
KW - Cu lead
KW - Embedded Module
KW - Inverter
KW - MOS-FET
KW - Micro-plating
KW - NMPB
KW - Ni
KW - Power module
KW - SBD
KW - SiC
UR - http://www.scopus.com/inward/record.url?scp=85090295603&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85090295603&partnerID=8YFLogxK
U2 - 10.1109/ECTC32862.2020.00346
DO - 10.1109/ECTC32862.2020.00346
M3 - Conference contribution
AN - SCOPUS:85090295603
T3 - Proceedings - Electronic Components and Technology Conference
SP - 2226
EP - 2229
BT - Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 70th IEEE Electronic Components and Technology Conference, ECTC 2020
Y2 - 3 June 2020 through 30 June 2020
ER -