As for the IGBT power device based on Si used for the vehicle, the performance limit of the Si semiconductor has been pointed out, and the SiC semiconductor has been attracting attention as a next-generation semiconductor. The SiC semiconductor has advantages such as a wider band gap, a larger breakdown electric field, and high temperature operation (about 300 ° C.). If these features can be maximized, a SiC power semiconductor module that can be significantly improved in efficiency, downsized, and operable in a high-temperature environment as compared with a Si semiconductor can be more widely implemented.In this study, two sets of SiC-MOS and SiC-SBD devices are embedded in a ceramic substrate, and their electrodes and the copper electrodes of the substrate are interconnected by NMPB (Nickel Micro-plating Bonding) method, so that one-leg prototype inverter modules of a highly heat-resistant and ultra-small size (47x30x1.3mm) could be manufactured. The NMPB method is a technology that we have originally developed to connect a chip electrode and a lead formed in a chevron shape by Ni plating. High-temperature operation and excellent switching characteristics of the SiC power module were demonstrated.