An Embedded SiC Module with Using NMPB Interconnection for Chevron Shaped Cu Lead and Electrodes

Naoki Fukui, Keiko Koshiba, Itaru Miyazaki, Isamu Morisako, Tomonori Iizuka, Tomoya Itose, Masayuki Hikita, Rikiya Kamimura, Kohei Tatsumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As for the IGBT power device based on Si used for the vehicle, the performance limit of the Si semiconductor has been pointed out, and the SiC semiconductor has been attracting attention as a next-generation semiconductor. The SiC semiconductor has advantages such as a wider band gap, a larger breakdown electric field, and high temperature operation (about 300 ° C.). If these features can be maximized, a SiC power semiconductor module that can be significantly improved in efficiency, downsized, and operable in a high-temperature environment as compared with a Si semiconductor can be more widely implemented.In this study, two sets of SiC-MOS and SiC-SBD devices are embedded in a ceramic substrate, and their electrodes and the copper electrodes of the substrate are interconnected by NMPB (Nickel Micro-plating Bonding) method, so that one-leg prototype inverter modules of a highly heat-resistant and ultra-small size (47x30x1.3mm) could be manufactured. The NMPB method is a technology that we have originally developed to connect a chip electrode and a lead formed in a chevron shape by Ni plating. High-temperature operation and excellent switching characteristics of the SiC power module were demonstrated.

Original languageEnglish
Title of host publicationProceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2226-2229
Number of pages4
ISBN (Electronic)9781728161808
DOIs
Publication statusPublished - 2020 Jun
Event70th IEEE Electronic Components and Technology Conference, ECTC 2020 - Orlando, United States
Duration: 2020 Jun 32020 Jun 30

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2020-June
ISSN (Print)0569-5503

Conference

Conference70th IEEE Electronic Components and Technology Conference, ECTC 2020
CountryUnited States
CityOrlando
Period20/6/320/6/30

Keywords

  • Chevron Shape
  • Cu lead
  • Embedded Module
  • Inverter
  • Micro-plating
  • MOS-FET
  • Ni
  • NMPB
  • Power module
  • SBD
  • SiC

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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