An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications

Toshihiko Yoshimasu, Masanori Akagi, Noriyuki Tanba, Shinji Hara

Research output: Contribution to journalArticle

99 Citations (Scopus)

Abstract

This paper gives a detailed description of a novel linearization technique using a transistor base-collector junction diode. The novel linearization technique effectively improves the gain compression and phase distortion of the heterojunction bipolar transistor (HBT) with no additional dc consumption, leading to highly efficient linear amplification of the π/4 DQPSK modulation signals. An AIGaAs/daAs HBT monolithic microwave integrated circuit (MMIC) linear power amplifier was fabricated using the novel linearization technique for the handsets used in the 1.9 GHz Japanese Personal Handy Phone System (PHS). The fabricated HBT MMIC power amplifier exhibits an output power of 21 dBm and a power-added efficiency as high as 37% at an operation voltage of 2.7 V. At this rated output power, the adjacent channel power rejection in ±600 kHz offset frequency bands is -55 dBc and the error vector magnitude is 4.3%. This measured linearity is well within the PHS standard.

Original languageEnglish
Pages (from-to)1290-1296
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Volume33
Issue number9
DOIs
Publication statusPublished - 1998 Sep
Externally publishedYes

Fingerprint

Monolithic microwave integrated circuits
Heterojunction bipolar transistors
Power amplifiers
Linearization
Diodes
Data as a service (DaaS)
Electric potential
Frequency bands
Amplification
Transistors
Modulation

Keywords

  • Heterojunction bipolar transistor
  • Linearizer
  • Monolithic microwave integrated circuit
  • Personal Handyphone System
  • Power amplifier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications. / Yoshimasu, Toshihiko; Akagi, Masanori; Tanba, Noriyuki; Hara, Shinji.

In: IEEE Journal of Solid-State Circuits, Vol. 33, No. 9, 09.1998, p. 1290-1296.

Research output: Contribution to journalArticle

@article{6181c6213c82487e8cf0794874f2a42f,
title = "An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications",
abstract = "This paper gives a detailed description of a novel linearization technique using a transistor base-collector junction diode. The novel linearization technique effectively improves the gain compression and phase distortion of the heterojunction bipolar transistor (HBT) with no additional dc consumption, leading to highly efficient linear amplification of the π/4 DQPSK modulation signals. An AIGaAs/daAs HBT monolithic microwave integrated circuit (MMIC) linear power amplifier was fabricated using the novel linearization technique for the handsets used in the 1.9 GHz Japanese Personal Handy Phone System (PHS). The fabricated HBT MMIC power amplifier exhibits an output power of 21 dBm and a power-added efficiency as high as 37{\%} at an operation voltage of 2.7 V. At this rated output power, the adjacent channel power rejection in ±600 kHz offset frequency bands is -55 dBc and the error vector magnitude is 4.3{\%}. This measured linearity is well within the PHS standard.",
keywords = "Heterojunction bipolar transistor, Linearizer, Monolithic microwave integrated circuit, Personal Handyphone System, Power amplifier",
author = "Toshihiko Yoshimasu and Masanori Akagi and Noriyuki Tanba and Shinji Hara",
year = "1998",
month = "9",
doi = "10.1109/4.711326",
language = "English",
volume = "33",
pages = "1290--1296",
journal = "IEEE Journal of Solid-State Circuits",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - An HBT MMIC power amplifier with an integrated diode linearizer for low-voltage portable phone applications

AU - Yoshimasu, Toshihiko

AU - Akagi, Masanori

AU - Tanba, Noriyuki

AU - Hara, Shinji

PY - 1998/9

Y1 - 1998/9

N2 - This paper gives a detailed description of a novel linearization technique using a transistor base-collector junction diode. The novel linearization technique effectively improves the gain compression and phase distortion of the heterojunction bipolar transistor (HBT) with no additional dc consumption, leading to highly efficient linear amplification of the π/4 DQPSK modulation signals. An AIGaAs/daAs HBT monolithic microwave integrated circuit (MMIC) linear power amplifier was fabricated using the novel linearization technique for the handsets used in the 1.9 GHz Japanese Personal Handy Phone System (PHS). The fabricated HBT MMIC power amplifier exhibits an output power of 21 dBm and a power-added efficiency as high as 37% at an operation voltage of 2.7 V. At this rated output power, the adjacent channel power rejection in ±600 kHz offset frequency bands is -55 dBc and the error vector magnitude is 4.3%. This measured linearity is well within the PHS standard.

AB - This paper gives a detailed description of a novel linearization technique using a transistor base-collector junction diode. The novel linearization technique effectively improves the gain compression and phase distortion of the heterojunction bipolar transistor (HBT) with no additional dc consumption, leading to highly efficient linear amplification of the π/4 DQPSK modulation signals. An AIGaAs/daAs HBT monolithic microwave integrated circuit (MMIC) linear power amplifier was fabricated using the novel linearization technique for the handsets used in the 1.9 GHz Japanese Personal Handy Phone System (PHS). The fabricated HBT MMIC power amplifier exhibits an output power of 21 dBm and a power-added efficiency as high as 37% at an operation voltage of 2.7 V. At this rated output power, the adjacent channel power rejection in ±600 kHz offset frequency bands is -55 dBc and the error vector magnitude is 4.3%. This measured linearity is well within the PHS standard.

KW - Heterojunction bipolar transistor

KW - Linearizer

KW - Monolithic microwave integrated circuit

KW - Personal Handyphone System

KW - Power amplifier

UR - http://www.scopus.com/inward/record.url?scp=0001600474&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001600474&partnerID=8YFLogxK

U2 - 10.1109/4.711326

DO - 10.1109/4.711326

M3 - Article

AN - SCOPUS:0001600474

VL - 33

SP - 1290

EP - 1296

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 9

ER -