An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka, Toshio Nishida, Toshiki Makimoto, Naoki Kobayashi

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Abstract

The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

Original languageEnglish
Pages (from-to)4104-4106
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number20
DOIs
Publication statusPublished - 2004 May 17
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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