An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka; Toshio Nishida; Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.1753068

An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka, Toshio Nishida, Toshiki Makimoto, Naoki Kobayashi

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7 Citations (Scopus)

Abstract

The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

Original language	English
Pages (from-to)	4104-4106
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	20
DOIs	https://doi.org/10.1063/1.1753068
Publication status	Published - 2004 May 17
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Akasaka, T., Nishida, T., Makimoto, T., & Kobayashi, N. (2004). An InGaN-based horizontal-cavity surface-emitting laser diode. Applied Physics Letters, 84(20), 4104-4106. https://doi.org/10.1063/1.1753068

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AB - The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

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10.1063/1.1753068