Abstract
The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.
| Original language | English |
|---|---|
| Pages (from-to) | 4104-4106 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2004 May 17 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
An InGaN-based horizontal-cavity surface-emitting laser diode. / Akasaka, Tetsuya; Nishida, Toshio; Makimoto, Toshiki; Kobayashi, Naoki.
In: Applied Physics Letters, Vol. 84, No. 20, 17.05.2004, p. 4104-4106.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - An InGaN-based horizontal-cavity surface-emitting laser diode
AU - Akasaka, Tetsuya
AU - Nishida, Toshio
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
PY - 2004/5/17
Y1 - 2004/5/17
N2 - The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.
AB - The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.
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UR - http://www.scopus.com/inward/citedby.url?scp=2942581568&partnerID=8YFLogxK
U2 - 10.1063/1.1753068
DO - 10.1063/1.1753068
M3 - Article
VL - 84
SP - 4104
EP - 4106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 20
ER -