An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka; Toshio Nishida; Toshiki Makimoto; Naoki Kobayashi

doi:10.1063/1.1753068

An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka, Toshio Nishida, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

Original language	English
Pages (from-to)	4104-4106
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	20
DOIs	https://doi.org/10.1063/1.1753068
Publication status	Published - 2004 May 17
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {112{\=0}} and inclined {112{\=2}} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.",

author = "Tetsuya Akasaka and Toshio Nishida and Toshiki Makimoto and Naoki Kobayashi",

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T1 - An InGaN-based horizontal-cavity surface-emitting laser diode

AU - Akasaka, Tetsuya

AU - Nishida, Toshio

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 2004/5/17

Y1 - 2004/5/17

N2 - The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

AB - The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

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