Abstract
The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.
| Original language | English |
|---|---|
| Pages (from-to) | 4104-4106 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2004 May 17 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Akasaka, T., Nishida, T., Makimoto, T., & Kobayashi, N. (2004). An InGaN-based horizontal-cavity surface-emitting laser diode. Applied Physics Letters, 84(20), 4104-4106. https://doi.org/10.1063/1.1753068