An InGaN-based horizontal-cavity surface-emitting laser diode

Tetsuya Akasaka, Toshio Nishida, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD), fabricated by dry-etching of InGaN-based multilayer on SiC sustrate was discussed. The InGaN-based HCSELD acted as a Fabry-Perrot laser diode which was equipped with outer micromirrors to reflect the laser beam upward. It was found that the cavity mirrors and outer micromirrors were vertical {1120̄} and inclined {1122̄} facets of the regrown Mg-doped GaN layers respectively. Analysis shows that the grown facets were very smooth and showed little angle misalignment.

Original languageEnglish
Pages (from-to)4104-4106
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number20
DOIs
Publication statusPublished - 2004 May 17
Externally publishedYes

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surface emitting lasers
semiconductor lasers
cavities
flat surfaces
misalignment
etching
laser beams
mirrors

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

An InGaN-based horizontal-cavity surface-emitting laser diode. / Akasaka, Tetsuya; Nishida, Toshio; Makimoto, Toshiki; Kobayashi, Naoki.

In: Applied Physics Letters, Vol. 84, No. 20, 17.05.2004, p. 4104-4106.

Research output: Contribution to journalArticle

Akasaka, Tetsuya ; Nishida, Toshio ; Makimoto, Toshiki ; Kobayashi, Naoki. / An InGaN-based horizontal-cavity surface-emitting laser diode. In: Applied Physics Letters. 2004 ; Vol. 84, No. 20. pp. 4104-4106.
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