An integrated miniature capacitive pressure sensor

Takeshi Kudoh*, Shuichi Shoji, Masayoshi Esashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


A newly designed capacitive pressure sensor which incorporates a CMOS IC on the same silicon chip has been developed. The sensor chip is 3.3 mm × 3.7 mm × 0.5 mm in size, and both the sensing capacitive element and the electronic circuit are hermetically sealed between the silicon substrate and the glass cover using a unique electrical feedthrough structure. The incorporated electronic circuit is the C-F converter whose oscillation frequency changes as a function of the sensing capacitance. By optimizing the circuit supply voltage, the thermally induced baseline (oscillation frequency at atmospheric pressure) drift can be reduced to within 3.1% F.S. between 20 °C and 50 °C. Since the oscillation frequency can be counted by the consumed current pulses, the pressure waveform can be monitored with only two external leads.

Original languageEnglish
Pages (from-to)185-193
Number of pages9
JournalSensors and Actuators: A. Physical
Issue number3
Publication statusPublished - 1991 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering


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