An Optically Delineated 4.2-µm2Self-Aligned Isolated-Plate Stacked-Capacitor DRAM Cell

Shin Ichiro Kimura, Yoshifumi Kawamoto, Norio Hasegawa, Atsushi Hiraiwa, Yoshinobu Nakagome, Masakazu Aoki, Hideo Sunami, Kiyoo Itoh, Teruaki Kisu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A 4.2-µm2 stacked capacitor DRAM cell is achieved using conventional i-line photolithography that realizes 0.6-µm pattern delineation. In order to obtain sufficient stored charge for memory operation, self-aligned plate-isolation technology, a novel pattern enlargement method named peripherally added resist lithography (PEARL), and a highly reliable ultrathin capacitor dielectric film are developed. These new technologies enable a stored charge of 25 fF/bit (41 fC/bit) in the present cell. Charge-retention characteristics and alpha-particle immunity are favorable, indicating that this cell is a good candidate for application to 16-Mbit DRAM’s.

Original languageEnglish
Pages (from-to)1591-1595
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume35
Issue number10
DOIs
Publication statusPublished - 1988
Externally publishedYes

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Dynamic random access storage
Capacitors
Alpha particles
Dielectric films
Photolithography
Lithography
Data storage equipment

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kimura, S. I., Kawamoto, Y., Hasegawa, N., Hiraiwa, A., Nakagome, Y., Aoki, M., ... Kisu, T. (1988). An Optically Delineated 4.2-µm2Self-Aligned Isolated-Plate Stacked-Capacitor DRAM Cell. IEEE Transactions on Electron Devices, 35(10), 1591-1595. https://doi.org/10.1109/16.7358

An Optically Delineated 4.2-µm2Self-Aligned Isolated-Plate Stacked-Capacitor DRAM Cell. / Kimura, Shin Ichiro; Kawamoto, Yoshifumi; Hasegawa, Norio; Hiraiwa, Atsushi; Nakagome, Yoshinobu; Aoki, Masakazu; Sunami, Hideo; Itoh, Kiyoo; Kisu, Teruaki.

In: IEEE Transactions on Electron Devices, Vol. 35, No. 10, 1988, p. 1591-1595.

Research output: Contribution to journalArticle

Kimura, SI, Kawamoto, Y, Hasegawa, N, Hiraiwa, A, Nakagome, Y, Aoki, M, Sunami, H, Itoh, K & Kisu, T 1988, 'An Optically Delineated 4.2-µm2Self-Aligned Isolated-Plate Stacked-Capacitor DRAM Cell', IEEE Transactions on Electron Devices, vol. 35, no. 10, pp. 1591-1595. https://doi.org/10.1109/16.7358
Kimura, Shin Ichiro ; Kawamoto, Yoshifumi ; Hasegawa, Norio ; Hiraiwa, Atsushi ; Nakagome, Yoshinobu ; Aoki, Masakazu ; Sunami, Hideo ; Itoh, Kiyoo ; Kisu, Teruaki. / An Optically Delineated 4.2-µm2Self-Aligned Isolated-Plate Stacked-Capacitor DRAM Cell. In: IEEE Transactions on Electron Devices. 1988 ; Vol. 35, No. 10. pp. 1591-1595.
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