An output-capacitorless low dropout regulator without resistors

Jie Mei, Hao Zhang, Tsutomu Yoshihara

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)


    An all-MOSFET low-power low-dropout regulator is designed in CMOS technology, featuring low sensitivity with respect to input voltage and temperature. Supply voltage can be as low as 800mV. An error amplify (EA) with an embedded voltage reference (EVR) is employed and a buffer is used to improve the load transient. The circuit is simulated in 0.18 μm CMOS technology. Simulated results verify that the proposed LDO is stable for a capacitive load from 0 to 10 pF and with load capability of 50 mA. The maximum overshoot and undershoot under a 0.8 V supply are less than 90 mV for full load current changes within 1 μs edge time, and the recovery time is less than 1.5 μs. The temperature coefficient (TC) is 37.8 ppm/°C ranging from -25 °C to 100 °C.

    Original languageEnglish
    Title of host publicationISOCC 2014 - International SoC Design Conference
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Number of pages2
    ISBN (Print)9781479951260
    Publication statusPublished - 2015 Apr 16
    Event11th International SoC Design Conference, ISOCC 2014 - Jeju, Korea, Republic of
    Duration: 2014 Nov 32014 Nov 6


    Other11th International SoC Design Conference, ISOCC 2014
    Country/TerritoryKorea, Republic of


    • embedded voltage reference
    • low voltage
    • Output-Capacitorless low-dropout regulator
    • temperature coefficient

    ASJC Scopus subject areas

    • Hardware and Architecture


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