An output-capacitorless low dropout regulator without resistors

Jie Mei; Hao Zhang; Tsutomu Yoshihara

doi:10.1109/ISOCC.2014.7087629

An output-capacitorless low dropout regulator without resistors

Jie Mei, Hao Zhang, Tsutomu Yoshihara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

An all-MOSFET low-power low-dropout regulator is designed in CMOS technology, featuring low sensitivity with respect to input voltage and temperature. Supply voltage can be as low as 800mV. An error amplify (EA) with an embedded voltage reference (EVR) is employed and a buffer is used to improve the load transient. The circuit is simulated in 0.18 μm CMOS technology. Simulated results verify that the proposed LDO is stable for a capacitive load from 0 to 10 pF and with load capability of 50 mA. The maximum overshoot and undershoot under a 0.8 V supply are less than 90 mV for full load current changes within 1 μs edge time, and the recovery time is less than 1.5 μs. The temperature coefficient (TC) is 37.8 ppm/°C ranging from -25 °C to 100 °C.

Original language	English
Title of host publication	ISOCC 2014 - International SoC Design Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	246-247
Number of pages	2
ISBN (Print)	9781479951260
DOIs	https://doi.org/10.1109/ISOCC.2014.7087629
Publication status	Published - 2015 Apr 16
Event	11th International SoC Design Conference, ISOCC 2014 - Jeju, Korea, Republic of Duration: 2014 Nov 3 → 2014 Nov 6

Other

Other	11th International SoC Design Conference, ISOCC 2014
Country/Territory	Korea, Republic of
City	Jeju
Period	14/11/3 → 14/11/6

Keywords

embedded voltage reference
low voltage
Output-Capacitorless low-dropout regulator
temperature coefficient

ASJC Scopus subject areas

Hardware and Architecture

Access to Document

10.1109/ISOCC.2014.7087629

Cite this

@inproceedings{bf2e6a83dcf34d5aa579f3daff9e81d6,

title = "An output-capacitorless low dropout regulator without resistors",

abstract = "An all-MOSFET low-power low-dropout regulator is designed in CMOS technology, featuring low sensitivity with respect to input voltage and temperature. Supply voltage can be as low as 800mV. An error amplify (EA) with an embedded voltage reference (EVR) is employed and a buffer is used to improve the load transient. The circuit is simulated in 0.18 μm CMOS technology. Simulated results verify that the proposed LDO is stable for a capacitive load from 0 to 10 pF and with load capability of 50 mA. The maximum overshoot and undershoot under a 0.8 V supply are less than 90 mV for full load current changes within 1 μs edge time, and the recovery time is less than 1.5 μs. The temperature coefficient (TC) is 37.8 ppm/°C ranging from -25 °C to 100 °C.",

keywords = "embedded voltage reference, low voltage, Output-Capacitorless low-dropout regulator, temperature coefficient",

author = "Jie Mei and Hao Zhang and Tsutomu Yoshihara",

year = "2015",

month = apr,

day = "16",

doi = "10.1109/ISOCC.2014.7087629",

language = "English",

isbn = "9781479951260",

pages = "246--247",

booktitle = "ISOCC 2014 - International SoC Design Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "11th International SoC Design Conference, ISOCC 2014 ; Conference date: 03-11-2014 Through 06-11-2014",

}

TY - GEN

T1 - An output-capacitorless low dropout regulator without resistors

AU - Mei, Jie

AU - Zhang, Hao

AU - Yoshihara, Tsutomu

PY - 2015/4/16

Y1 - 2015/4/16

N2 - An all-MOSFET low-power low-dropout regulator is designed in CMOS technology, featuring low sensitivity with respect to input voltage and temperature. Supply voltage can be as low as 800mV. An error amplify (EA) with an embedded voltage reference (EVR) is employed and a buffer is used to improve the load transient. The circuit is simulated in 0.18 μm CMOS technology. Simulated results verify that the proposed LDO is stable for a capacitive load from 0 to 10 pF and with load capability of 50 mA. The maximum overshoot and undershoot under a 0.8 V supply are less than 90 mV for full load current changes within 1 μs edge time, and the recovery time is less than 1.5 μs. The temperature coefficient (TC) is 37.8 ppm/°C ranging from -25 °C to 100 °C.

AB - An all-MOSFET low-power low-dropout regulator is designed in CMOS technology, featuring low sensitivity with respect to input voltage and temperature. Supply voltage can be as low as 800mV. An error amplify (EA) with an embedded voltage reference (EVR) is employed and a buffer is used to improve the load transient. The circuit is simulated in 0.18 μm CMOS technology. Simulated results verify that the proposed LDO is stable for a capacitive load from 0 to 10 pF and with load capability of 50 mA. The maximum overshoot and undershoot under a 0.8 V supply are less than 90 mV for full load current changes within 1 μs edge time, and the recovery time is less than 1.5 μs. The temperature coefficient (TC) is 37.8 ppm/°C ranging from -25 °C to 100 °C.

KW - embedded voltage reference

KW - low voltage

KW - Output-Capacitorless low-dropout regulator

KW - temperature coefficient

UR - http://www.scopus.com/inward/record.url?scp=84929378594&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929378594&partnerID=8YFLogxK

U2 - 10.1109/ISOCC.2014.7087629

DO - 10.1109/ISOCC.2014.7087629

M3 - Conference contribution

AN - SCOPUS:84929378594

SN - 9781479951260

SP - 246

EP - 247

BT - ISOCC 2014 - International SoC Design Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th International SoC Design Conference, ISOCC 2014

Y2 - 3 November 2014 through 6 November 2014

ER -

An output-capacitorless low dropout regulator without resistors

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this