An S-band 100W GaN protection switch

Masatake Hangai; Tamotsu Nishino; Yoshitaka Kamo; Moriyasu Miyazaki

doi:10.1109/MWSYM.2007.380490

An S-band 100W GaN protection switch

Masatake Hangai^*, Tamotsu Nishino, Yoshitaka Kamo, Moriyasu Miyazaki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

17 Citations (Scopus)

Abstract

A high-power protection GaN FET switch has been developed. Our invented switching circuit utilizes a new asymmetric series-shunt/shunt configuration. By using the proposed circuit, the power handling capability at isolated state is determined only by the breakdown voltage and the bias voltage of the FETs. So the gate width of the FETs can be determined independently of the power handling capability, and we can overcome the trade-off relationship between the insertion loss at transmission state and the power handling capability at isolated state by using FETs having high breakdown voltage. To verify this methodology, we fabricated the switch with an AlGaN/GaN FET technology, and the circuit achieved the power handling capability of over 100W, the insertion loss of 0.97dB, and the isolation of 18.7dB at 10% bandwidth in S-band.

Original language	English
Title of host publication	2007 IEEE MTT-S International Microwave Symposium Digest
Pages	1389-1392
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2007.380490
Publication status	Published - 2007
Externally published	Yes
Event	2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States Duration: 2007 Jun 3 → 2007 Jun 8

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Other

Other	2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Country/Territory	United States
City	Honolulu, HI
Period	07/6/3 → 07/6/8

Keywords

AlGaN/GaN
Asymmetric configuration
FET
High-power
Low-loss
Series-shunt/shunt
Switch

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2007.380490

Cite this

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title = "An S-band 100W GaN protection switch",

abstract = "A high-power protection GaN FET switch has been developed. Our invented switching circuit utilizes a new asymmetric series-shunt/shunt configuration. By using the proposed circuit, the power handling capability at isolated state is determined only by the breakdown voltage and the bias voltage of the FETs. So the gate width of the FETs can be determined independently of the power handling capability, and we can overcome the trade-off relationship between the insertion loss at transmission state and the power handling capability at isolated state by using FETs having high breakdown voltage. To verify this methodology, we fabricated the switch with an AlGaN/GaN FET technology, and the circuit achieved the power handling capability of over 100W, the insertion loss of 0.97dB, and the isolation of 18.7dB at 10% bandwidth in S-band.",

keywords = "AlGaN/GaN, Asymmetric configuration, FET, High-power, Low-loss, Series-shunt/shunt, Switch",

author = "Masatake Hangai and Tamotsu Nishino and Yoshitaka Kamo and Moriyasu Miyazaki",

year = "2007",

doi = "10.1109/MWSYM.2007.380490",

language = "English",

isbn = "1424406889",

series = "IEEE MTT-S International Microwave Symposium Digest",

pages = "1389--1392",

booktitle = "2007 IEEE MTT-S International Microwave Symposium Digest",

note = "2007 IEEE MTT-S International Microwave Symposium, IMS 2007 ; Conference date: 03-06-2007 Through 08-06-2007",

}

TY - GEN

T1 - An S-band 100W GaN protection switch

AU - Hangai, Masatake

AU - Nishino, Tamotsu

AU - Kamo, Yoshitaka

AU - Miyazaki, Moriyasu

PY - 2007

Y1 - 2007

N2 - A high-power protection GaN FET switch has been developed. Our invented switching circuit utilizes a new asymmetric series-shunt/shunt configuration. By using the proposed circuit, the power handling capability at isolated state is determined only by the breakdown voltage and the bias voltage of the FETs. So the gate width of the FETs can be determined independently of the power handling capability, and we can overcome the trade-off relationship between the insertion loss at transmission state and the power handling capability at isolated state by using FETs having high breakdown voltage. To verify this methodology, we fabricated the switch with an AlGaN/GaN FET technology, and the circuit achieved the power handling capability of over 100W, the insertion loss of 0.97dB, and the isolation of 18.7dB at 10% bandwidth in S-band.

AB - A high-power protection GaN FET switch has been developed. Our invented switching circuit utilizes a new asymmetric series-shunt/shunt configuration. By using the proposed circuit, the power handling capability at isolated state is determined only by the breakdown voltage and the bias voltage of the FETs. So the gate width of the FETs can be determined independently of the power handling capability, and we can overcome the trade-off relationship between the insertion loss at transmission state and the power handling capability at isolated state by using FETs having high breakdown voltage. To verify this methodology, we fabricated the switch with an AlGaN/GaN FET technology, and the circuit achieved the power handling capability of over 100W, the insertion loss of 0.97dB, and the isolation of 18.7dB at 10% bandwidth in S-band.

KW - AlGaN/GaN

KW - Asymmetric configuration

KW - FET

KW - High-power

KW - Low-loss

KW - Series-shunt/shunt

KW - Switch

UR - http://www.scopus.com/inward/record.url?scp=34748813103&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34748813103&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2007.380490

DO - 10.1109/MWSYM.2007.380490

M3 - Conference contribution

AN - SCOPUS:34748813103

SN - 1424406889

SN - 9781424406883

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 1389

EP - 1392

BT - 2007 IEEE MTT-S International Microwave Symposium Digest

T2 - 2007 IEEE MTT-S International Microwave Symposium, IMS 2007

Y2 - 3 June 2007 through 8 June 2007

ER -

An S-band 100W GaN protection switch

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

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