An S-band 100W GaN protection switch

Masatake Hangai*, Tamotsu Nishino, Yoshitaka Kamo, Moriyasu Miyazaki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

A high-power protection GaN FET switch has been developed. Our invented switching circuit utilizes a new asymmetric series-shunt/shunt configuration. By using the proposed circuit, the power handling capability at isolated state is determined only by the breakdown voltage and the bias voltage of the FETs. So the gate width of the FETs can be determined independently of the power handling capability, and we can overcome the trade-off relationship between the insertion loss at transmission state and the power handling capability at isolated state by using FETs having high breakdown voltage. To verify this methodology, we fabricated the switch with an AlGaN/GaN FET technology, and the circuit achieved the power handling capability of over 100W, the insertion loss of 0.97dB, and the isolation of 18.7dB at 10% bandwidth in S-band.

Original languageEnglish
Title of host publication2007 IEEE MTT-S International Microwave Symposium Digest
Pages1389-1392
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 IEEE MTT-S International Microwave Symposium, IMS 2007 - Honolulu, HI, United States
Duration: 2007 Jun 32007 Jun 8

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2007 IEEE MTT-S International Microwave Symposium, IMS 2007
Country/TerritoryUnited States
CityHonolulu, HI
Period07/6/307/6/8

Keywords

  • AlGaN/GaN
  • Asymmetric configuration
  • FET
  • High-power
  • Low-loss
  • Series-shunt/shunt
  • Switch

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'An S-band 100W GaN protection switch'. Together they form a unique fingerprint.

Cite this