Abstract
A novel 2.2-GHz-band ultra-low-voltage Class-C PMOS VCO IC with negative reference and amplitude feedback loop is proposed. The negative reference initially adapts a sufficient bias for the LC-VCO circuit to ensure a robust oscillation start-up. The feedback loop then adaptively controls the bias condition of LC-VCO for Class-C operation in steady-state. The reliability of the feedback loop is enhanced over PVT variation. The Class-C VCO IC has been designed, fabricated and fully evaluated in 180-nm CMOS technology. The fabricated VCO IC exhibits a measured phase noise of -113.2 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier frequency with a supply voltage of only 0.3 V.
| Original language | English |
|---|---|
| Title of host publication | SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 107-109 |
| Number of pages | 3 |
| ISBN (Print) | 9781509016877 |
| DOIs | |
| Publication status | Published - 2016 Mar 31 |
| Event | 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 - Austin, United States Duration: 2016 Jan 24 → 2016 Jan 27 |
Other
| Other | 16th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2016 |
|---|---|
| Country | United States |
| City | Austin |
| Period | 16/1/24 → 16/1/27 |
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Keywords
- 180-nm CMOS
- amplitude feedback loop
- Class-C VCO
- negative reference
- PMOS
- PVT compensation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Computer Networks and Communications
Cite this
An ultra-low-voltage Class-C PMOS VCO IC with PVT compensation in 180-nm CMOS. / Yang, Xin; Xu, Xiao; Yoshimasu, Toshihiko.
SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2016. p. 107-109 7445482.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - An ultra-low-voltage Class-C PMOS VCO IC with PVT compensation in 180-nm CMOS
AU - Yang, Xin
AU - Xu, Xiao
AU - Yoshimasu, Toshihiko
PY - 2016/3/31
Y1 - 2016/3/31
N2 - A novel 2.2-GHz-band ultra-low-voltage Class-C PMOS VCO IC with negative reference and amplitude feedback loop is proposed. The negative reference initially adapts a sufficient bias for the LC-VCO circuit to ensure a robust oscillation start-up. The feedback loop then adaptively controls the bias condition of LC-VCO for Class-C operation in steady-state. The reliability of the feedback loop is enhanced over PVT variation. The Class-C VCO IC has been designed, fabricated and fully evaluated in 180-nm CMOS technology. The fabricated VCO IC exhibits a measured phase noise of -113.2 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier frequency with a supply voltage of only 0.3 V.
AB - A novel 2.2-GHz-band ultra-low-voltage Class-C PMOS VCO IC with negative reference and amplitude feedback loop is proposed. The negative reference initially adapts a sufficient bias for the LC-VCO circuit to ensure a robust oscillation start-up. The feedback loop then adaptively controls the bias condition of LC-VCO for Class-C operation in steady-state. The reliability of the feedback loop is enhanced over PVT variation. The Class-C VCO IC has been designed, fabricated and fully evaluated in 180-nm CMOS technology. The fabricated VCO IC exhibits a measured phase noise of -113.2 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier frequency with a supply voltage of only 0.3 V.
KW - 180-nm CMOS
KW - amplitude feedback loop
KW - Class-C VCO
KW - negative reference
KW - PMOS
KW - PVT compensation
UR - http://www.scopus.com/inward/record.url?scp=84968796779&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84968796779&partnerID=8YFLogxK
U2 - 10.1109/SIRF.2016.7445482
DO - 10.1109/SIRF.2016.7445482
M3 - Conference contribution
AN - SCOPUS:84968796779
SN - 9781509016877
SP - 107
EP - 109
BT - SiRF 2016 - 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PB - Institute of Electrical and Electronics Engineers Inc.
ER -