An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology

Jia Chen, Toshihiko Yoshimasu, WeiLiang Hu, Haiwen Liu, Nobuyuki Itoh, Koji Yonemura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose a unique wideband amplifier configuration. The new configuration adopts an improved Darlington amplifier to broaden the bandwidth and flatten the output gain. The low power consumption and matched impedances are also achieved in our amplifier. This circuit has been realized using Toshiba 0.35μm SiGe BiCMOS technology with the fT of 30GHz. The simulation result of the presented amplifier demonstrates 1-10GHz bandwidth and 11.3-dB maximum forward gain (S21) with less than ±0.5-dB gain flatness while it drains 8mA from a 3-V supply. A 1-dB compression point and an DP3 of -12.5dBm and 6dBm respectively also have been reported in this paper.

Original languageEnglish
Title of host publication2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings
Pages2614-2617
Number of pages4
Volume4
DOIs
Publication statusPublished - 2006
Event2006 International Conference on Communications, Circuits and Systems, ICCCAS - Guilin
Duration: 2006 Jun 252006 Jun 28

Other

Other2006 International Conference on Communications, Circuits and Systems, ICCCAS
CityGuilin
Period06/6/2506/6/28

Fingerprint

BiCMOS technology
Power amplifiers
Ultra-wideband (UWB)
Bandwidth
Broadband amplifiers
Electric power utilization
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chen, J., Yoshimasu, T., Hu, W., Liu, H., Itoh, N., & Yonemura, K. (2006). An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. In 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings (Vol. 4, pp. 2614-2617). [4064455] https://doi.org/10.1109/ICCCAS.2006.285208

An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. / Chen, Jia; Yoshimasu, Toshihiko; Hu, WeiLiang; Liu, Haiwen; Itoh, Nobuyuki; Yonemura, Koji.

2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings. Vol. 4 2006. p. 2614-2617 4064455.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, J, Yoshimasu, T, Hu, W, Liu, H, Itoh, N & Yonemura, K 2006, An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. in 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings. vol. 4, 4064455, pp. 2614-2617, 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Guilin, 06/6/25. https://doi.org/10.1109/ICCCAS.2006.285208
Chen J, Yoshimasu T, Hu W, Liu H, Itoh N, Yonemura K. An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. In 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings. Vol. 4. 2006. p. 2614-2617. 4064455 https://doi.org/10.1109/ICCCAS.2006.285208
Chen, Jia ; Yoshimasu, Toshihiko ; Hu, WeiLiang ; Liu, Haiwen ; Itoh, Nobuyuki ; Yonemura, Koji. / An ultra-wideband and low-power amplifier using 0.35-μm SiGe BiCMOS technology. 2006 International Conference on Communications, Circuits and Systems, ICCCAS, Proceedings. Vol. 4 2006. pp. 2614-2617
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