An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS

Lei Sun, Xiao Xu, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

Original languageEnglish
Title of host publication2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781538663462
DOIs
Publication statusPublished - 2018 Jun 29
Event2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Chengdu, China
Duration: 2018 May 62018 May 9

Other

Other2018 IEEE MTT-S International Wireless Symposium, IWS 2018
CountryChina
CityChengdu
Period18/5/618/5/9

Fingerprint

voltage controlled oscillators
Variable frequency oscillators
SOI (semiconductors)
superhigh frequencies
low voltage
CMOS
Electric potential
Buffer amplifiers
carrier frequencies
Phase noise
buffers
amplifiers
wafers
Networks (circuits)
electric potential

Keywords

  • LC tank circuit
  • Low voltage
  • Silicon-on-insulator
  • Voltage-controlled oscillators

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

Cite this

Sun, L., Xu, X., & Yoshimasu, T. (2018). An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS. In 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2018.8400967

An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS. / Sun, Lei; Xu, Xiao; Yoshimasu, Toshihiko.

2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-3.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sun, L, Xu, X & Yoshimasu, T 2018, An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS. in 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 2018 IEEE MTT-S International Wireless Symposium, IWS 2018, Chengdu, China, 18/5/6. https://doi.org/10.1109/IEEE-IWS.2018.8400967
Sun L, Xu X, Yoshimasu T. An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS. In 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-3 https://doi.org/10.1109/IEEE-IWS.2018.8400967
Sun, Lei ; Xu, Xiao ; Yoshimasu, Toshihiko. / An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS. 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-3
@inproceedings{efe08dcc80be40838cba11f8d463c9a9,
title = "An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS",
abstract = "An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.",
keywords = "LC tank circuit, Low voltage, Silicon-on-insulator, Voltage-controlled oscillators",
author = "Lei Sun and Xiao Xu and Toshihiko Yoshimasu",
year = "2018",
month = "6",
day = "29",
doi = "10.1109/IEEE-IWS.2018.8400967",
language = "English",
pages = "1--3",
booktitle = "2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS

AU - Sun, Lei

AU - Xu, Xiao

AU - Yoshimasu, Toshihiko

PY - 2018/6/29

Y1 - 2018/6/29

N2 - An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

AB - An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

KW - LC tank circuit

KW - Low voltage

KW - Silicon-on-insulator

KW - Voltage-controlled oscillators

UR - http://www.scopus.com/inward/record.url?scp=85050376363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050376363&partnerID=8YFLogxK

U2 - 10.1109/IEEE-IWS.2018.8400967

DO - 10.1109/IEEE-IWS.2018.8400967

M3 - Conference contribution

SP - 1

EP - 3

BT - 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -