An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS

Lei Sun; Xiao Xu; Toshihiko Yoshimasu

doi:10.1109/IEEE-IWS.2018.8400967

An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS

Lei Sun, Xiao Xu, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

Original language	English
Title of host publication	2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781538663462
DOIs	https://doi.org/10.1109/IEEE-IWS.2018.8400967
Publication status	Published - 2018 Jun 29
Event	2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Chengdu, China Duration: 2018 May 6 → 2018 May 9

Other

Other	2018 IEEE MTT-S International Wireless Symposium, IWS 2018
Country	China
City	Chengdu
Period	18/5/6 → 18/5/9

Fingerprint

Keywords

LC tank circuit
Low voltage
Silicon-on-insulator
Voltage-controlled oscillators

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Cite this

Sun, L., Xu, X., & Yoshimasu, T. (2018). An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS. In 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2018.8400967

Sun, L, Xu, X & Yoshimasu, T 2018, An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS. in 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 2018 IEEE MTT-S International Wireless Symposium, IWS 2018, Chengdu, China, 18/5/6. https://doi.org/10.1109/IEEE-IWS.2018.8400967

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abstract = "An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.",

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N2 - An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

AB - An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

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Access to Document

10.1109/IEEE-IWS.2018.8400967