An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS

Lei Sun; Xiao Xu; Toshihiko Yoshimasu

doi:10.1109/IEEE-IWS.2018.8400967

An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS

Lei Sun, Xiao Xu, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

Original language	English
Title of host publication	2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781538663462
DOIs	https://doi.org/10.1109/IEEE-IWS.2018.8400967
Publication status	Published - 2018 Jun 29
Event	2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Chengdu, China Duration: 2018 May 6 → 2018 May 9

Other

Other	2018 IEEE MTT-S International Wireless Symposium, IWS 2018
Country	China
City	Chengdu
Period	18/5/6 → 18/5/9

Keywords

LC tank circuit
Low voltage
Silicon-on-insulator
Voltage-controlled oscillators

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/IEEE-IWS.2018.8400967

Fingerprint Dive into the research topics of 'An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS'. Together they form a unique fingerprint.

Cite this

Sun, L, Xu, X & Yoshimasu, T 2018, An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS. in 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 2018 IEEE MTT-S International Wireless Symposium, IWS 2018, Chengdu, China, 18/5/6. https://doi.org/10.1109/IEEE-IWS.2018.8400967

@inproceedings{efe08dcc80be40838cba11f8d463c9a9,

title = "An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS",

abstract = "An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.",

keywords = "LC tank circuit, Low voltage, Silicon-on-insulator, Voltage-controlled oscillators",

author = "Lei Sun and Xiao Xu and Toshihiko Yoshimasu",

year = "2018",

month = jun,

day = "29",

doi = "10.1109/IEEE-IWS.2018.8400967",

language = "English",

pages = "1--3",

booktitle = "2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2018 IEEE MTT-S International Wireless Symposium, IWS 2018 ; Conference date: 06-05-2018 Through 09-05-2018",

}

TY - GEN

T1 - An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS

AU - Sun, Lei

AU - Xu, Xiao

AU - Yoshimasu, Toshihiko

PY - 2018/6/29

Y1 - 2018/6/29

N2 - An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

AB - An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of-119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.

KW - LC tank circuit

KW - Low voltage

KW - Silicon-on-insulator

KW - Voltage-controlled oscillators

UR - http://www.scopus.com/inward/record.url?scp=85050376363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050376363&partnerID=8YFLogxK

U2 - 10.1109/IEEE-IWS.2018.8400967

DO - 10.1109/IEEE-IWS.2018.8400967

M3 - Conference contribution

AN - SCOPUS:85050376363

SP - 1

EP - 3

BT - 2018 IEEE MTT-S International Wireless Symposium, IWS 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE MTT-S International Wireless Symposium, IWS 2018

Y2 - 6 May 2018 through 9 May 2018

ER -

An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this