An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces

D. R. Menke, J. Qiu, R. L. Gunshor, Masakazu Kobayashi, D. Li, Y. Nakamura, N. Otsuka

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In this paper in situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at ZnSe/GaAs and CdTe/InSb interfaces grown by molecular-beam epitaxy. X-ray photoelectron spectra support the transmission electron microscopy evidence that ZnSe/GaAs MIS capacitors exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc blende Ga<inf>2</inf>Se<inf>3</inf>. An interfacial layer can be deliberately introduced by reacting an As deficient GaAs surface with an incident Se flux. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from separately grown Ga<inf>2</inf>Se<inf>3</inf> epilayers, clearly indicate the same Se bonding characteristic for the Se-reacted layer, and the Ga<inf>2</inf>Se<inf>3</inf> epilayer. A parallel XPS study of CdTe/InSb interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming a II-VI-on-III-V junction.

Original languageEnglish
Pages (from-to)2171-2175
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number4
DOIs
Publication statusPublished - 1991 Jul 1
Externally publishedYes

Fingerprint

Epilayers
Photoelectron spectroscopy
x ray spectroscopy
photoelectron spectroscopy
X rays
Core levels
Interface states
Management information systems
MIS (semiconductors)
Photoelectrons
Molecular beam epitaxy
capacitors
tendencies
photoelectrons
Zinc
Capacitors
molecular beam epitaxy
zinc
Fluxes
Transmission electron microscopy

Keywords

  • Bonding
  • Cadmium tellurides
  • CdTe
  • GaAs
  • Gallium arsenides
  • Indium antimonides
  • InSb
  • Interface states
  • Molecular beam epitaxy
  • Photoelectron spectroscopy
  • X radiation
  • Zinc selenides
  • ZnSe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces. / Menke, D. R.; Qiu, J.; Gunshor, R. L.; Kobayashi, Masakazu; Li, D.; Nakamura, Y.; Otsuka, N.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 4, 01.07.1991, p. 2171-2175.

Research output: Contribution to journalArticle

@article{70a9f4eed11748309ea77ab0dea18579,
title = "An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces",
abstract = "In this paper in situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at ZnSe/GaAs and CdTe/InSb interfaces grown by molecular-beam epitaxy. X-ray photoelectron spectra support the transmission electron microscopy evidence that ZnSe/GaAs MIS capacitors exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc blende Ga2Se3. An interfacial layer can be deliberately introduced by reacting an As deficient GaAs surface with an incident Se flux. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from separately grown Ga2Se3 epilayers, clearly indicate the same Se bonding characteristic for the Se-reacted layer, and the Ga2Se3 epilayer. A parallel XPS study of CdTe/InSb interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming a II-VI-on-III-V junction.",
keywords = "Bonding, Cadmium tellurides, CdTe, GaAs, Gallium arsenides, Indium antimonides, InSb, Interface states, Molecular beam epitaxy, Photoelectron spectroscopy, X radiation, Zinc selenides, ZnSe",
author = "Menke, {D. R.} and J. Qiu and Gunshor, {R. L.} and Masakazu Kobayashi and D. Li and Y. Nakamura and N. Otsuka",
year = "1991",
month = "7",
day = "1",
doi = "10.1116/1.585759",
language = "English",
volume = "9",
pages = "2171--2175",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces

AU - Menke, D. R.

AU - Qiu, J.

AU - Gunshor, R. L.

AU - Kobayashi, Masakazu

AU - Li, D.

AU - Nakamura, Y.

AU - Otsuka, N.

PY - 1991/7/1

Y1 - 1991/7/1

N2 - In this paper in situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at ZnSe/GaAs and CdTe/InSb interfaces grown by molecular-beam epitaxy. X-ray photoelectron spectra support the transmission electron microscopy evidence that ZnSe/GaAs MIS capacitors exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc blende Ga2Se3. An interfacial layer can be deliberately introduced by reacting an As deficient GaAs surface with an incident Se flux. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from separately grown Ga2Se3 epilayers, clearly indicate the same Se bonding characteristic for the Se-reacted layer, and the Ga2Se3 epilayer. A parallel XPS study of CdTe/InSb interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming a II-VI-on-III-V junction.

AB - In this paper in situ x-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at ZnSe/GaAs and CdTe/InSb interfaces grown by molecular-beam epitaxy. X-ray photoelectron spectra support the transmission electron microscopy evidence that ZnSe/GaAs MIS capacitors exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc blende Ga2Se3. An interfacial layer can be deliberately introduced by reacting an As deficient GaAs surface with an incident Se flux. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from separately grown Ga2Se3 epilayers, clearly indicate the same Se bonding characteristic for the Se-reacted layer, and the Ga2Se3 epilayer. A parallel XPS study of CdTe/InSb interfaces leads to the conclusion that there is a general tendency for the formation of a III-VI interfacial compound when forming a II-VI-on-III-V junction.

KW - Bonding

KW - Cadmium tellurides

KW - CdTe

KW - GaAs

KW - Gallium arsenides

KW - Indium antimonides

KW - InSb

KW - Interface states

KW - Molecular beam epitaxy

KW - Photoelectron spectroscopy

KW - X radiation

KW - Zinc selenides

KW - ZnSe

UR - http://www.scopus.com/inward/record.url?scp=84881477951&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881477951&partnerID=8YFLogxK

U2 - 10.1116/1.585759

DO - 10.1116/1.585759

M3 - Article

AN - SCOPUS:84881477951

VL - 9

SP - 2171

EP - 2175

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

ER -