Analog circuit design methodology utilizing a structure of thin BOX FDSOI

Kota Chubachi; Shinichi Nishizawa; Kazuhito Ito

doi:10.1587/elex.16.20181136

Analog circuit design methodology utilizing a structure of thin BOX FDSOI

Kota Chubachi^*, Shinichi Nishizawa, Kazuhito Ito

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This paper proposes to utilize a structure of thin BOX FDSOI in analog circuit design. The thin BOX layer is utilized to create area efficient capacitors. The design experiment shows that the combination of the thin BOX layer capacitor and a metal fringe capacitor improves the capacitance by 92% in comparison with the metal fringe capacitor only. Another advantage of the thin BOX FDSOI technology is the high controllability of the threshold voltages of transistors. As a demonstration of utilizing the advantage in analog circuit design, we designed a PMOS-type Dickson charge pump with dynamic threshold voltage control. The designed charge pump achieves 5.7 times larger output current and 3.5 times higher energy efficiency than a conventional charge pump.

Original language	English
Article number	20181136
Journal	ieice electronics express
Volume	16
Issue number	5
DOIs	https://doi.org/10.1587/elex.16.20181136
Publication status	Published - 2019
Externally published	Yes

Keywords

Body bias control
Charge pump
Thin BOX FDSOI

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1587/elex.16.20181136

Cite this

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title = "Analog circuit design methodology utilizing a structure of thin BOX FDSOI",

abstract = "This paper proposes to utilize a structure of thin BOX FDSOI in analog circuit design. The thin BOX layer is utilized to create area efficient capacitors. The design experiment shows that the combination of the thin BOX layer capacitor and a metal fringe capacitor improves the capacitance by 92% in comparison with the metal fringe capacitor only. Another advantage of the thin BOX FDSOI technology is the high controllability of the threshold voltages of transistors. As a demonstration of utilizing the advantage in analog circuit design, we designed a PMOS-type Dickson charge pump with dynamic threshold voltage control. The designed charge pump achieves 5.7 times larger output current and 3.5 times higher energy efficiency than a conventional charge pump.",

keywords = "Body bias control, Charge pump, Thin BOX FDSOI",

author = "Kota Chubachi and Shinichi Nishizawa and Kazuhito Ito",

note = "Funding Information: This work is partly supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Synopsys, Inc., Cadence Design Systems, Inc., and Mentor Graphics, Inc. Publisher Copyright: {\textcopyright} IEICE 2019.",

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doi = "10.1587/elex.16.20181136",

language = "English",

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journal = "IEICE Electronics Express",

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AU - Chubachi, Kota

AU - Nishizawa, Shinichi

AU - Ito, Kazuhito

N1 - Funding Information: This work is partly supported by VLSI Design and Education Center (VDEC), the University of Tokyo in collaboration with Synopsys, Inc., Cadence Design Systems, Inc., and Mentor Graphics, Inc. Publisher Copyright: © IEICE 2019.

PY - 2019

Y1 - 2019

N2 - This paper proposes to utilize a structure of thin BOX FDSOI in analog circuit design. The thin BOX layer is utilized to create area efficient capacitors. The design experiment shows that the combination of the thin BOX layer capacitor and a metal fringe capacitor improves the capacitance by 92% in comparison with the metal fringe capacitor only. Another advantage of the thin BOX FDSOI technology is the high controllability of the threshold voltages of transistors. As a demonstration of utilizing the advantage in analog circuit design, we designed a PMOS-type Dickson charge pump with dynamic threshold voltage control. The designed charge pump achieves 5.7 times larger output current and 3.5 times higher energy efficiency than a conventional charge pump.

AB - This paper proposes to utilize a structure of thin BOX FDSOI in analog circuit design. The thin BOX layer is utilized to create area efficient capacitors. The design experiment shows that the combination of the thin BOX layer capacitor and a metal fringe capacitor improves the capacitance by 92% in comparison with the metal fringe capacitor only. Another advantage of the thin BOX FDSOI technology is the high controllability of the threshold voltages of transistors. As a demonstration of utilizing the advantage in analog circuit design, we designed a PMOS-type Dickson charge pump with dynamic threshold voltage control. The designed charge pump achieves 5.7 times larger output current and 3.5 times higher energy efficiency than a conventional charge pump.

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KW - Charge pump

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Analog circuit design methodology utilizing a structure of thin BOX FDSOI

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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