Analysis by surface-sensitive second harmonic generation of Si(111)7 × 7 exposed to high-purity ozone jet for oxide film formation

Ken Nakamura, Akira Kurokawa, Shingo Ichimura

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We observed an in situ process of ozone adsorption on Si(111)7 × 7 at different temperatures by second harmonic generation (SHG). On ozone exposure, the second harmonics (SH) intensity descreased close to a detectable limit on the surface at room temperature (RT). However, we observed the appearance of another SH intensity during ozone exposure at elevated substrate temperatures between 260 °C and 400 °C, after it decreased in the same way as that at RT. On these surfaces, the profile of SH intensity recovery by desorption of adsorbed species indicated that different adsorbed species were formed during surface exposure to ozone at different substrate temperatures: those at RT are weakly adsorbed species for termination of dangling bonds and insertion into backbonds, and those at higher temperatures have an Si-O-Si network which is more stable and desorbs at higher temperatures than 700 °C. We conclude that the SH intensity that appeared on the surfaces at elevated temperatures is due to more stable SiO2-like Si-O-Si bonding as an initial step of oxide formation.

Original languageEnglish
Pages (from-to)88-93
Number of pages6
JournalSurface and Interface Analysis
Volume25
Issue number2
Publication statusPublished - 1997 Feb 1
Externally publishedYes

Fingerprint

Ozone
Harmonic generation
ozone
Oxide films
oxide films
harmonic generations
purity
harmonics
room temperature
Temperature
temperature
insertion
desorption
recovery
adsorption
oxides
Dangling bonds
profiles
Substrates
Oxides

Keywords

  • Adsorption
  • Film
  • Ozone
  • Second harmonic generation
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Analysis by surface-sensitive second harmonic generation of Si(111)7 × 7 exposed to high-purity ozone jet for oxide film formation. / Nakamura, Ken; Kurokawa, Akira; Ichimura, Shingo.

In: Surface and Interface Analysis, Vol. 25, No. 2, 01.02.1997, p. 88-93.

Research output: Contribution to journalArticle

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N2 - We observed an in situ process of ozone adsorption on Si(111)7 × 7 at different temperatures by second harmonic generation (SHG). On ozone exposure, the second harmonics (SH) intensity descreased close to a detectable limit on the surface at room temperature (RT). However, we observed the appearance of another SH intensity during ozone exposure at elevated substrate temperatures between 260 °C and 400 °C, after it decreased in the same way as that at RT. On these surfaces, the profile of SH intensity recovery by desorption of adsorbed species indicated that different adsorbed species were formed during surface exposure to ozone at different substrate temperatures: those at RT are weakly adsorbed species for termination of dangling bonds and insertion into backbonds, and those at higher temperatures have an Si-O-Si network which is more stable and desorbs at higher temperatures than 700 °C. We conclude that the SH intensity that appeared on the surfaces at elevated temperatures is due to more stable SiO2-like Si-O-Si bonding as an initial step of oxide formation.

AB - We observed an in situ process of ozone adsorption on Si(111)7 × 7 at different temperatures by second harmonic generation (SHG). On ozone exposure, the second harmonics (SH) intensity descreased close to a detectable limit on the surface at room temperature (RT). However, we observed the appearance of another SH intensity during ozone exposure at elevated substrate temperatures between 260 °C and 400 °C, after it decreased in the same way as that at RT. On these surfaces, the profile of SH intensity recovery by desorption of adsorbed species indicated that different adsorbed species were formed during surface exposure to ozone at different substrate temperatures: those at RT are weakly adsorbed species for termination of dangling bonds and insertion into backbonds, and those at higher temperatures have an Si-O-Si network which is more stable and desorbs at higher temperatures than 700 °C. We conclude that the SH intensity that appeared on the surfaces at elevated temperatures is due to more stable SiO2-like Si-O-Si bonding as an initial step of oxide formation.

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