Analysis of local lattice strain around oxygen precipitates in Czochralski-grown silicon wafers using convergent beam electron diffraction

Mitsuharu Yonemura, Koji Sueoka, Kazuhito Kamei

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The local lattice strain field around oxygen precipitates in Czochralski-grown silicon (CZ-Si) wafers has been measured quantitatively using convergent beam electron diffraction (CBED). As a result of the strain analysis from higher-order Laue zone patterns in the CBED disk, strain of the silicon lattices was found in the vicinity of oxygen precipitates, i.e., platelet type and polyhedral type. The strain along the normal direction to the precipitate is compressive, and the strain along the parallel direction to the precipitate is tensile. The lattice strain field around the precipitate decreases monotonically as a function of distance from the precipitate/matrix interface. Further, the morphological change in the growth process of the precipitate is important for the formation of the local lattice strain.

Original languageEnglish
Pages (from-to)3440-3447
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number6 A
Publication statusPublished - 1999 Jun
Externally publishedYes

Fingerprint

Silicon wafers
Electron diffraction
Precipitates
precipitates
electron diffraction
wafers
Oxygen
silicon
oxygen
Platelets
platelets
Silicon
matrices

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The local lattice strain field around oxygen precipitates in Czochralski-grown silicon (CZ-Si) wafers has been measured quantitatively using convergent beam electron diffraction (CBED). As a result of the strain analysis from higher-order Laue zone patterns in the CBED disk, strain of the silicon lattices was found in the vicinity of oxygen precipitates, i.e., platelet type and polyhedral type. The strain along the normal direction to the precipitate is compressive, and the strain along the parallel direction to the precipitate is tensile. The lattice strain field around the precipitate decreases monotonically as a function of distance from the precipitate/matrix interface. Further, the morphological change in the growth process of the precipitate is important for the formation of the local lattice strain.",
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T1 - Analysis of local lattice strain around oxygen precipitates in Czochralski-grown silicon wafers using convergent beam electron diffraction

AU - Yonemura, Mitsuharu

AU - Sueoka, Koji

AU - Kamei, Kazuhito

PY - 1999/6

Y1 - 1999/6

N2 - The local lattice strain field around oxygen precipitates in Czochralski-grown silicon (CZ-Si) wafers has been measured quantitatively using convergent beam electron diffraction (CBED). As a result of the strain analysis from higher-order Laue zone patterns in the CBED disk, strain of the silicon lattices was found in the vicinity of oxygen precipitates, i.e., platelet type and polyhedral type. The strain along the normal direction to the precipitate is compressive, and the strain along the parallel direction to the precipitate is tensile. The lattice strain field around the precipitate decreases monotonically as a function of distance from the precipitate/matrix interface. Further, the morphological change in the growth process of the precipitate is important for the formation of the local lattice strain.

AB - The local lattice strain field around oxygen precipitates in Czochralski-grown silicon (CZ-Si) wafers has been measured quantitatively using convergent beam electron diffraction (CBED). As a result of the strain analysis from higher-order Laue zone patterns in the CBED disk, strain of the silicon lattices was found in the vicinity of oxygen precipitates, i.e., platelet type and polyhedral type. The strain along the normal direction to the precipitate is compressive, and the strain along the parallel direction to the precipitate is tensile. The lattice strain field around the precipitate decreases monotonically as a function of distance from the precipitate/matrix interface. Further, the morphological change in the growth process of the precipitate is important for the formation of the local lattice strain.

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