Analysis of O (1D) distribution by time-resolved measurement of ozone density for application of UV-light excited ozone to oxidation process

Aki Tosaka, Tetsuya Nishiguchi, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Silicon oxidation process using UV-light excited ozone, i.e., ca. 100% ozone atmosphere irradiated by KrF excimer laser light (λ = 248 nm), is one of the most promising techniques to fabricate a high-quality SiO 2 film at low temperatures. To clarify the mechanism of the silicon oxidation and to optimize the conditions of oxidation, we have done a time-resolved measurement of ozone density. The result shows that there are three stages of ozone density change. The calculated ozone density based on a reaction model fits the observed density at the first stage.

Original languageEnglish
Pages (from-to)123-125
Number of pages3
JournalShinku/Journal of the Vacuum Society of Japan
Volume49
Issue number3
DOIs
Publication statusPublished - 2006 Jun 28
Externally publishedYes

Fingerprint

Ozone
Time measurement
Ultraviolet radiation
ozone
time measurement
Oxidation
oxidation
Silicon
Excimer lasers
silicon
excimer lasers
atmospheres
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Analysis of O (1D) distribution by time-resolved measurement of ozone density for application of UV-light excited ozone to oxidation process. / Tosaka, Aki; Nishiguchi, Tetsuya; Nonaka, Hidehiko; Ichimura, Shingo.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 49, No. 3, 28.06.2006, p. 123-125.

Research output: Contribution to journalArticle

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