ANALYSIS OF SOFT ERROR IN MOS DYNAMIC RAM.

Tsutomu Yoshihara, Satoshi Takano, Makoto Taniguchi, Horoshi Harada, Takao Nakano

Research output: Contribution to journalArticle

Abstract

The soft error rate of a MOS dynamic RAM is strongly influenced by the energy spectrum of the incident alpha particles, the collecting processes of electric charges generated by them, and the critical charge of the device. These effects are clarified in the present paper and some experimental results with 65 K RAMs are described.

Original languageEnglish
Pages (from-to)109-114
Number of pages6
JournalElectronics & communications in Japan
Volume65
Issue number4
Publication statusPublished - 1982 Apr
Externally publishedYes

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Random access storage
Electric charge
Alpha particles

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yoshihara, T., Takano, S., Taniguchi, M., Harada, H., & Nakano, T. (1982). ANALYSIS OF SOFT ERROR IN MOS DYNAMIC RAM. Electronics & communications in Japan, 65(4), 109-114.

ANALYSIS OF SOFT ERROR IN MOS DYNAMIC RAM. / Yoshihara, Tsutomu; Takano, Satoshi; Taniguchi, Makoto; Harada, Horoshi; Nakano, Takao.

In: Electronics & communications in Japan, Vol. 65, No. 4, 04.1982, p. 109-114.

Research output: Contribution to journalArticle

Yoshihara, T, Takano, S, Taniguchi, M, Harada, H & Nakano, T 1982, 'ANALYSIS OF SOFT ERROR IN MOS DYNAMIC RAM.', Electronics & communications in Japan, vol. 65, no. 4, pp. 109-114.
Yoshihara T, Takano S, Taniguchi M, Harada H, Nakano T. ANALYSIS OF SOFT ERROR IN MOS DYNAMIC RAM. Electronics & communications in Japan. 1982 Apr;65(4):109-114.
Yoshihara, Tsutomu ; Takano, Satoshi ; Taniguchi, Makoto ; Harada, Horoshi ; Nakano, Takao. / ANALYSIS OF SOFT ERROR IN MOS DYNAMIC RAM. In: Electronics & communications in Japan. 1982 ; Vol. 65, No. 4. pp. 109-114.
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