Analysis of the degradation mechanism of Pt/SrBi 2(Ta/Nb) 2O 9/Pt capacitors during reductive annealing

Atsushi Tofuku, Tomohisa Yoshie, Tetsuya Osaka, Ichiro Koiwa, Hiroyo Kobayashi, Yoshihiro Sawada, Akira Hashimoto

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

Degradation mechanism of the Pt/SrBi 2Ta 2xO 9/Pt and Pt/SrBi 2(Ta 1.x/Nb x) 2O 9/Pt capacitors exposed to the hydrogen attack has been analyzed. The capacitors were fabricated from thin-films consisting of SrBi 2Ta 2xO 9 (1 ≃ x ≃ 1.1) and SrBi 2(Ta 1.x/Nb x) 2O 9 (0 ≃ x ≃ 1) (SBTN) that were formed using a sol-gel process. In most capacitors, SBTN thin-films were short-circuited while annealing in the reducing atmosphere. In contrast, excessive Ta addition could hold back the short circuit. Analysis of the degradation mechanism were carried out by means of the XRD, TEM and XPS, which revealed that the most significant alteration took place in the vicinity of crystal grain boundaries. It was also found that the film with excessive Ta concentration contains the pyrochlore phase in the grain boundary layers. These findings suggest that the stabilization of grain boundary layers is effective to realize capacitors resistant to process conditions.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
Pages245-264
Number of pages20
Volume25
Edition1-4
Publication statusPublished - 1999

Fingerprint

capacitors
Grain boundaries
Capacitors
Annealing
degradation
Degradation
annealing
grain boundaries
Boundary layers
boundary layers
Short circuit currents
Sol-gel process
Hydrogen
short circuits
sol-gel processes
X ray photoelectron spectroscopy
thin films
Stabilization
attack
Transmission electron microscopy

Keywords

  • Bismuth layer structured compound
  • Ferroelectric thin film
  • Leakage current; hydrogen anneal
  • SrBi (Ta/Nb) O

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Tofuku, A., Yoshie, T., Osaka, T., Koiwa, I., Kobayashi, H., Sawada, Y., & Hashimoto, A. (1999). Analysis of the degradation mechanism of Pt/SrBi 2(Ta/Nb) 2O 9/Pt capacitors during reductive annealing In Integrated Ferroelectrics (1-4 ed., Vol. 25, pp. 245-264)

Analysis of the degradation mechanism of Pt/SrBi 2(Ta/Nb) 2O 9/Pt capacitors during reductive annealing . / Tofuku, Atsushi; Yoshie, Tomohisa; Osaka, Tetsuya; Koiwa, Ichiro; Kobayashi, Hiroyo; Sawada, Yoshihiro; Hashimoto, Akira.

Integrated Ferroelectrics. Vol. 25 1-4. ed. 1999. p. 245-264.

Research output: Chapter in Book/Report/Conference proceedingChapter

Tofuku, A, Yoshie, T, Osaka, T, Koiwa, I, Kobayashi, H, Sawada, Y & Hashimoto, A 1999, Analysis of the degradation mechanism of Pt/SrBi 2(Ta/Nb) 2O 9/Pt capacitors during reductive annealing in Integrated Ferroelectrics. 1-4 edn, vol. 25, pp. 245-264.
Tofuku A, Yoshie T, Osaka T, Koiwa I, Kobayashi H, Sawada Y et al. Analysis of the degradation mechanism of Pt/SrBi 2(Ta/Nb) 2O 9/Pt capacitors during reductive annealing In Integrated Ferroelectrics. 1-4 ed. Vol. 25. 1999. p. 245-264
Tofuku, Atsushi ; Yoshie, Tomohisa ; Osaka, Tetsuya ; Koiwa, Ichiro ; Kobayashi, Hiroyo ; Sawada, Yoshihiro ; Hashimoto, Akira. / Analysis of the degradation mechanism of Pt/SrBi 2(Ta/Nb) 2O 9/Pt capacitors during reductive annealing Integrated Ferroelectrics. Vol. 25 1-4. ed. 1999. pp. 245-264
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AU - Yoshie, Tomohisa

AU - Osaka, Tetsuya

AU - Koiwa, Ichiro

AU - Kobayashi, Hiroyo

AU - Sawada, Yoshihiro

AU - Hashimoto, Akira

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AB - Degradation mechanism of the Pt/SrBi 2Ta 2xO 9/Pt and Pt/SrBi 2(Ta 1.x/Nb x) 2O 9/Pt capacitors exposed to the hydrogen attack has been analyzed. The capacitors were fabricated from thin-films consisting of SrBi 2Ta 2xO 9 (1 ≃ x ≃ 1.1) and SrBi 2(Ta 1.x/Nb x) 2O 9 (0 ≃ x ≃ 1) (SBTN) that were formed using a sol-gel process. In most capacitors, SBTN thin-films were short-circuited while annealing in the reducing atmosphere. In contrast, excessive Ta addition could hold back the short circuit. Analysis of the degradation mechanism were carried out by means of the XRD, TEM and XPS, which revealed that the most significant alteration took place in the vicinity of crystal grain boundaries. It was also found that the film with excessive Ta concentration contains the pyrochlore phase in the grain boundary layers. These findings suggest that the stabilization of grain boundary layers is effective to realize capacitors resistant to process conditions.

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