Analysis of the degradation mechanism of Pt/SrBi2(Ta/Nb)2O9/Pt capacitors during reductive annealing

Atsushi Tofuku, Tomohisa Yoshie, Tetsuya Osaka, Ichiro Koiwa, Hiroyo Kobayashi, Yoshihiro Sawada, Akira Hashimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Degradation mechanism of the Pt/SrBi2Ta2xO9/Pt and Pt/SrBi2(Ta1.x/Nbx)2O9/Pt capacitors exposed to the hydrogen attack has been analyzed. The capacitors were fabricated from thin-films consisting of SrBi2Ta2xO9 (1 ≃ x ≃ 1.1) and SrBi2(Ta1.x/Nbx)2O9 (0 ≃ x ≃ 1) (SBTN) that were formed using a sol-gel process. In most capacitors, SBTN thin-films were short-circuited while annealing in the reducing atmosphere. In contrast, excessive Ta addition could hold back the short circuit. Analysis of the degradation mechanism were carried out by means of the XRD, TEM and XPS, which revealed that the most significant alteration took place in the vicinity of crystal grain boundaries. It was also found that the film with excessive Ta concentration contains the pyrochlore phase in the grain boundary layers. These findings suggest that the stabilization of grain boundary layers is effective to realize capacitors resistant to process conditions.

Original languageEnglish
Pages (from-to)245-264
Number of pages20
JournalIntegrated Ferroelectrics
Volume25
Issue number1-4
DOIs
Publication statusPublished - 1999 Jan 1

Keywords

  • Bismuth layer structured compound
  • Ferroelectric thin film
  • Leakage current; hydrogen anneal
  • SrBi(Ta/Nb)O

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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